Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Praveen Pechimuthu"'
Autor:
Murugapandiyan Panneerselvam, Elamurugan Raju, Baskaran Subramanian, Subash Navaneethan Vivekanandhan, Mohanbabu Anandan, Yogesh Kumar Verma, Praveen Pechimuthu, Mohammed Wasim, Saminathan Veerappan, Saravana Kumar Radhakrishnan
Publikováno v:
Journal of Electronic Materials. 49:4091-4099
This paper presents a systematic study of Al0.23Ga0.77N/GaN/AlxGa1−xN double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a boron-doped P+ GaN cap layer under the gate. The boron-doped GaN cap layer shows great potential to for
Autor:
Subramanian, Baskaran, Anandan, Mohanbabu, Veerappan, Saminathan, Panneerselvam, Murugapandiyan, Wasim, Mohammed, Radhakrishnan, Saravana Kumar, Pechimuthu, Praveen, Verma, Yogesh Kumar, Vivekanandhan, Subash Navaneethan, Raju, Elamurugan
Publikováno v:
Journal of Electronic Materials; Jul2020, Vol. 49 Issue 7, p4091-4099, 9p