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pro vyhledávání: '"Pratiksha Dhake"'
Publikováno v:
Key Engineering Materials. 934:15-22
The idea of a buried oxide layer (BOx) in a split channel Gate All Around-Tunnel Field Effect Transistor (GAA-TFET) was investigated in this paper. This work examined the impact of buried oxide layer on the device's performance. With the BOx layer pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1203d1a200d587dc9b2eebfa0310bfe0
https://doi.org/10.4028/p-i221xc
https://doi.org/10.4028/p-i221xc
