Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Pratik Agnihotri"'
Publikováno v:
AIP Advances, Vol 6, Iss 2, Pp 025301-025301-7 (2016)
Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene ju
Externí odkaz:
https://doaj.org/article/55e0e515068543fb9c9d0f32ab89ad2b
Publikováno v:
IEEE Transactions on Nuclear Science. 65:53-57
We examine total ionizing dose effects in devices that can reconfigure into both n- and p-channel MOSFETs. The devices are fabricated using 2-D transition metal dichalcogenide semiconductor WSe2 and allow better insight into radiation effects than un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9487d5cc227353664f937c2ec45e55
https://doi.org/10.1109/tns.2017.2771149
https://doi.org/10.1109/tns.2017.2771149
Autor:
Pratik Agnihotri, Redwan N. Sajjad, Xiaodong Zhou, Avik W. Ghosh, Ji Ung Lee, Mirza M. Elahi, Alexander Kerelsky, Frances M. Ross, Abhay Pasupathy, K. M. Masum Habib, Dennis Wang
Publikováno v:
ACS nano. 13(2)
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45e1fa2a3c0521bad3b5616609bd7290
https://pubmed.ncbi.nlm.nih.gov/30689949
https://pubmed.ncbi.nlm.nih.gov/30689949
Autor:
B. Liu, J. Cho, Srikanth Samavedam, Seong Yeol Mun, Shi Yongjun, Jae Gon Lee, J. Ciavatti, V. Mahajan, Hong Wei, Baofu Zhu, D. K. Sohn, Wong Chun Yu, T. J. Lee, Pratik Agnihotri
Publikováno v:
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS).
The quantitative model of effective total capacitance, Ceff, of a CMOS ring oscillator (R/O) inverter chain in a 14nm node FinFET 3D structure using advanced Replacement Metal Gate (RMG) is successfully extracted using all the unit capacitance compon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61590e1c4bf8f8e93090c398b50c3ee0
https://doi.org/10.1109/icmts.2018.8383787
https://doi.org/10.1109/icmts.2018.8383787
Publikováno v:
Nanotechnology. 28(26)
The three pillars of semiconductor device technologies are (1) the p-n diode, (2) the metal-oxide-semiconductor field-effect transistor and (3) the bipolar junction transistor. They have enabled the unprecedented growth in the field of information te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::eb93f674f803813f0b53987a04d4b819
https://pubmed.ncbi.nlm.nih.gov/28510534
https://pubmed.ncbi.nlm.nih.gov/28510534
Autor:
Shouleh Nikzad, Fatemeh Shahedipour-Sandvik, Pratik Agnihotri, Mihir Tungare, L. Douglas Bell, Jeffrey M. Leathersich, Puneet Suvarna
Publikováno v:
Journal of Electronic Materials. 42:854-858
GaN-based visible-blind and AlGaN-based solar-blind avalanche photodiodes (APDs) have been grown and fabricated on sapphire substrates. The GaN p-i-n APDs show low dark current with high gain. The AlGaN layers for the Al0.55Ga0.45N-based APDs are gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f27d8b0c530c3b3e58554ada86126b
https://doi.org/10.1007/s11664-013-2537-8
https://doi.org/10.1007/s11664-013-2537-8
Autor:
Jeffrey M. Leathersich, Puneet Suvarna, Pratik Agnihotri, Fatemeh Shahedipour-Sandvik, Mihir Tungare, Joan M. Redwing, Morgan D. Evans, Xiaojun Weng
Publikováno v:
Journal of Electronic Materials. 42:833-837
A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d08d85d614dd72609f6fd591bfb420c9
https://doi.org/10.1007/s11664-013-2491-5
https://doi.org/10.1007/s11664-013-2491-5
Publikováno v:
Nano letters. 16(7)
In the development of semiconductor devices, the bipolar junction transistor (BJT) features prominently as being the first solid state transistor that helped to usher in the digital revolution. For any new semiconductor, therefore, the fabrication an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25139e717c1d0fb7ddfc2d73175db333
https://pubmed.ncbi.nlm.nih.gov/27336742
https://pubmed.ncbi.nlm.nih.gov/27336742
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 44:1478-1485
A novel electrochemically self-assembled semiconductor nanowire infrared photodetector is demonstrated. Its operation is based on excitation of electrons from shallow trap levels in the bandgap into the conduction band—a process which prefers photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4732e47d93d155f180554af6732bc3b
https://doi.org/10.1016/j.physe.2012.03.011
https://doi.org/10.1016/j.physe.2012.03.011
Autor:
Son T. Le, Ji Ung Lee, Nikolai N. Klimov, Everett Comfort, Jun Yan, Curt A. Richter, David B. Newell, Pratik Agnihotri
Publikováno v:
Physical Review B. 92
We experimentally investigate charge carrier transport in a graphene $p\ensuremath{-}n$ junction device by using independent $p$-type and $n$-type electrostatic gating which allow full characterization of the junction interface in the quantum Hall re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0c975da1d6075f6e0e25bdde0d2175
https://doi.org/10.1103/physrevb.92.241301
https://doi.org/10.1103/physrevb.92.241301