Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Prasad S. Gudem"'
Autor:
Ji Kai Wang, Collin VanEssen, Thomas Cam, Keith Ferrer, Zhi Cheng Yuan, Prasad S. Gudem, Diego Kienle, Mani Vaidyanathan
Publikováno v:
IEEE Transactions on Electron Devices. 69:4153-4161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe0ae1ccc0280d72b33b2a37133d6b2
https://doi.org/10.1109/ted.2022.3187374
https://doi.org/10.1109/ted.2022.3187374
Autor:
Mani Vaidyanathan, Collin G. VanEssen, Prasad S. Gudem, Anirudh Aggarwal, Zhi Cheng Yuan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 68:5101-5107
We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7357c0cf12bbefa2bb70d98b8b5cbcaa
https://doi.org/10.1109/ted.2021.3108125
https://doi.org/10.1109/ted.2021.3108125
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 68:903-907
We derive analytical expressions for the harmonic transfer functions (HTFs) of N-path filters with arbitrary source and load impedances. We start with first-order approximations of the HTFs based on a simplified “Ohm’s-law” characterization of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30881342ce4739f936d6df822e00dc6
https://doi.org/10.1109/tcsii.2020.3022860
https://doi.org/10.1109/tcsii.2020.3022860
Autor:
Kyle Holland, Prasad S. Gudem, Ji Kai Wang, Michael Wong, Mani Vaidyanathan, Thomas Cam, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 67:3843-3851
We use full quantum-transport simulations by coupling the Landau–Khalatnikov (LK) and Poisson equations self-consistently with the nonequilibrium Green’s function (NEGF) formalism, and calibrated to experimental results, to investigate extremely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58bf1dc68e2c8eed71fb073454f4a33a
https://doi.org/10.1109/ted.2020.3007398
https://doi.org/10.1109/ted.2020.3007398
Autor:
Ji Kai Wang, Prasad S. Gudem, Zhi Cheng Yuan, Michael Wong, Thomas Cam, Kyle Holland, Mani Vaidyanathan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 67:3442-3450
As continuous development and optimization of negative-capacitance field-effect transistors (NCFETs) are pursued for digital applications, it is also desirable to examine the radio frequency (RF) performance of these devices, especially devices with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b55447c443aa413cf3778aa342299e5
https://doi.org/10.1109/ted.2020.3001248
https://doi.org/10.1109/ted.2020.3001248
Autor:
Ji Kai Wang, Prasad S. Gudem, Michael Wong, Zhi Cheng Yuan, Terence B. Hook, Paul M. Solomon, Mani Vaidyanathan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 66:2028-2035
Ferroelectric and negative-capacitance field-effect transistors (FeFETs and NCFETs) have recently garnered great attention as devices for applications in memory and low-power logic, respectively. As these technologies are pursued, it is critical to h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7b3548250cebcf7931a3edfa83cde9
https://doi.org/10.1109/ted.2019.2901668
https://doi.org/10.1109/ted.2019.2901668
Publikováno v:
AIAA AVIATION 2020 FORUM.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2350022d7dc96566f1615bf64c153432
https://doi.org/10.2514/6.2020-2709
https://doi.org/10.2514/6.2020-2709
Publikováno v:
IEEE Microwave and Wireless Components Letters. 29:59-61
In frequency division duplex systems, spurious emission from transmitter (TX) can fall into receive band and lead to significant receiver desensitization. In this paper, a DSP-based solution that relies on a linear auxiliary receiver to cancel receiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5040b52aa62504822a1dd21a8dc2ab4
https://doi.org/10.1109/lmwc.2018.2884640
https://doi.org/10.1109/lmwc.2018.2884640
Autor:
Diego Kienle, Thomas Cam, Ji Kai Wang, Terence B. Hook, Kyle D. Holland, Michael Wong, Mani Vaidyanathan, Prasad S. Gudem
Publikováno v:
IEEE Transactions on Electron Devices. 64:5107-5113
We investigate the channel material dependence of wave function deformation scattering (WDS), a phenomenon that occurs when the shape of the carrier wave function is forced to change as the channel is traversed. Line-edge roughness (LER) is one nonid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137662a1d57c807aa681ddfa53aa4c49
https://doi.org/10.1109/ted.2017.2766782
https://doi.org/10.1109/ted.2017.2766782