Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Prasad Bhosale"'
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055127-055127-9 (2018)
We present an ab initio evaluation of electron scattering mechanisms in Al interconnects from a back-end-of-line (BEOL) perspective. We consider the ballistic conductance as a function of nanowire size, as well as the impact of surface oxidation on e
Externí odkaz:
https://doaj.org/article/9695f71ea2a542cf862995d5132a71db
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 11:5147-5154
bstract: Twitter serves as a popular social media platform for sharing information during disasters. However, the task of distinguishing informative tweets from the overwhelming volume of content can be daunting. In this research, we propose an innov
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 10:1506-1510
Social media platforms like Facebook, Whatsapp, Twitter, and Telegram are important sources of information diffusion in the modern period, and people believe it with- out questioning its authenticity or source. Social media has fascinated people worl
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 10:664-666
During the time of crisis, people often post countless instructive and informative tweets on various social media platforms like Twitter. Recognizing informative tweets could be a difficult errand during the fiasco from such an enormous pool of tweet
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 30:60-67
We assess the performance impact of cobalt interconnect metallization for both signal routing and power delivery in advanced logic technologies with a minimum metal pitch of 32 nm or less. While cobalt interconnects may enable lower line resistance i
Publikováno v:
2022 International Conference on Electronics and Renewable Systems (ICEARS).
Autor:
Ruilong Xie, Heng Wu, Muthumanickam Sankarapandian, Dechao Guo, Huiming Bu, Balasubramanian S. Haran, Jingyun Zhang, Prasad Bhosale, Su-Chen Fan, Shogo Mochizuki, Zuoguang Liu, Andrew M. Greene, Jean E. Wynne, Frougier Julien, Nicolas Loubet, Veeraraghavan S. Basker, Shanti Pancharatnam
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
An analysis of NanoSheet (NS) transistor parasitic resistance components is presented and correlated to the resistance readout on Si wafers. With this model, it is possible to identify which components cause the parasitic resistance increases as CPP
Autor:
Juntao Li, Yasir Sulehria, Nicholas A. Lanzillo, Devika Sil, Joe Lee, James J. Kelly, Raghuveer R. Patlolla, Hosadurga Shobha, Anuja DeSilva, Prasad Bhosale, Takeshi Nogami, Oleg Gluschenkov, Lawrence A. Clevenger, Son Nguyen, Jennifer Church, Huai Huang, Balasubramanian S. Haran, Yann Mignot, James J. Demarest, Andrew H. Simon, Brown Peethala Dan Edelstein
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (i.e. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional
Autor:
Hsiang-Jen Huang, Roey Shaviv, Lee Joung Joo, Balasubramanian S. Pranatharthi Haran, Nicolas Loubet, Suketu A. Parikh, A. Simon, Takeshi Nogami, S. Reidy, Rong Tao, M. Gage, Nicholas A. Lanzillo, M. Stolfi, Prasad Bhosale
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We demonstrate a design-technology co-optimization (DTCO) solution for enabling novel composite interconnects in next-generation high-performance computing (HPC) applications. Minimum-pitch signal line optimization with aggressively shrunk feature si
Autor:
J. Kelly, Takeshi Nogami, Son V. Nguyen, D. Edelstein, J. Li, Junha Lee, G. Lian, Prasad Bhosale, M. Ali, J. Demarest, L. Jiang, Devika Sil, B. Haran, Chao-Kun Hu, H. Shobha, N. Lanzillo, C. Penny, S. Lian, S. DeVries, G. Bonilla, T. Standaert, H. Huang, K. Motoyama, R. Patlolla
Publikováno v:
2019 Symposium on VLSI Technology.
Electromigration (EM) and TDDB reliability of Cu interconnects with a barrier/wetting layer as thin as 2 nm employing a PVD-reflowed through-Co self-forming barrier (tCoSFB) is demonstrated to meet the required specifications for 7 nm BEOL. The resul