Fabrication of lateral InAs quantum-dot-molecules on InGaAs square-like nanohole templates by 2-step growth technique using molecular beam epitaxy (MBE).

Autor: Prapasawad, Nattapa, Panyakeow, Somsak, Prongjit, Patchareewan, Ratanathammaphan, Somchai

Publikováno v: 2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications & Information Technology (ECTI-CON); 2015, p1-4, 4p