Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Pramoda Kumara Shetty"'
Publikováno v:
Materials Today: Proceedings. 55:141-147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ced5edfa580ff38d7702c1b1597237f
https://doi.org/10.1016/j.matpr.2022.01.048
https://doi.org/10.1016/j.matpr.2022.01.048
Autor:
K. S. Vaishnavi, Indudhar Panduranga Vali, M.G. Mahesha, Rashmitha Keshav, Pramoda Kumara Shetty, M. Rajeshwari
Publikováno v:
Silicon. 14:3785-3794
To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d39a0d94baed48c0222c883d2d4615f
https://doi.org/10.1007/s12633-021-01429-1
https://doi.org/10.1007/s12633-021-01429-1
Publikováno v:
Materials Chemistry and Physics. 302:127712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49884ac5916e521c58fe9ae3165d6c1c
https://doi.org/10.1016/j.matchemphys.2023.127712
https://doi.org/10.1016/j.matchemphys.2023.127712
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:8496-8501
In this article, the thermal neutron irradiation (NI) effects on the structural properties of n-4H–SiC and electrical properties of Al/n-4H–SiC Schottky contacts have been reported. The noticeable modifications observed in the irradiated samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854b719829751dac0d39784060c1b1bc
https://doi.org/10.1007/s10854-020-03385-9
https://doi.org/10.1007/s10854-020-03385-9
Publikováno v:
Radiation Physics and Chemistry. 202:110502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2110521a15f518a58bc5cb898653c9f
https://doi.org/10.1016/j.radphyschem.2022.110502
https://doi.org/10.1016/j.radphyschem.2022.110502
Publikováno v:
Optik. 269:169881
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230fbaf5d9f457760ee3f02b24acf567
https://doi.org/10.1016/j.ijleo.2022.169881
https://doi.org/10.1016/j.ijleo.2022.169881
Publikováno v:
Materials Science in Semiconductor Processing. 150:106931
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8ade21b5b1454f23bd3e91b64ba3d0
https://doi.org/10.1016/j.mssp.2022.106931
https://doi.org/10.1016/j.mssp.2022.106931
Publikováno v:
Sensors and Actuators A: Physical. 345:113785
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e9e3eb922efda59692ceef8ebcbd09
https://doi.org/10.1016/j.sna.2022.113785
https://doi.org/10.1016/j.sna.2022.113785
Autor:
Pramoda Kumara Shetty, M.G. Mahesha, Indudhar Panduranga Vali, R. J. Choudhary, Deodatta M. Phase, V.G. Sathe
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 440:101-106
In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c - and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da36e304a651ffcb32066ec334929179
https://doi.org/10.1016/j.nimb.2018.12.016
https://doi.org/10.1016/j.nimb.2018.12.016
Autor:
Pramoda Kumara Shetty, Vikash Chandra Petwal, Indudhar Panduranga Vali, R.J. Choudhary, Jishnu Dwivedi, M.G. Mahesha, D.M. Phase
Publikováno v:
Microelectronics Reliability. 91:179-184
The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d429dd4d3afeed58e3066b3114a7f770
https://doi.org/10.1016/j.microrel.2018.07.031
https://doi.org/10.1016/j.microrel.2018.07.031