Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Pramanik, Tanmoy"'
Autor:
Roy, Anupam, Dey, Rik, Pramanik, Tanmoy, Rai, Amritesh, Schalip, Ryan, Majumder, Sarmita, Guchhait, Samaresh, Banerjee, Sanjay K
Publikováno v:
Phys. Rev. Materials 4, pp. 025001 (2020)
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning
Externí odkaz:
http://arxiv.org/abs/2003.01199
Autor:
Pramanik, Tanmoy, Roy, Anupam, Dey, Rik, Rai, Amritesh, Guchhait, Samaresh, Movva, Hema CP, Hsieh, Cheng-Chih, Banerjee, Sanjay K
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong secon
Externí odkaz:
http://arxiv.org/abs/1705.03121
Autor:
Roy, Anupam, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Kim, Kyounghwan, Movva, Hema C. P., Dey, Rik, Pramanik, Tanmoy, Chowdhury, Sayema, Tutuc, Emanuel, Banerjee, Sanjay K.
Publikováno v:
Appl. Phys. Lett. 110, 201905 (2017)
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged in
Externí odkaz:
http://arxiv.org/abs/1705.03051
Autor:
Dey, Rik, Roy, Anupam, Pramanik, Tanmoy, Rai, Amritesh, Shin, Seung Heon, Majumder, Sarmita, Register, Leonard F., Banerjee, Sanjay K.
Publikováno v:
Applied Physics Letters 110, 122403 (2017)
We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown Bi$_2$Te$_3$ thin film in a two-terminal device with a ferromagnetic MgO/Fe and a nonmagnetic Ti/Au contact. The two-point resistance, meas
Externí odkaz:
http://arxiv.org/abs/1704.02031
Akademický článek
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Akademický článek
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Publikováno v:
IEEE Transactions on Magnetics, Volume 52, Issue 10, Oct 2016
Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure
Externí odkaz:
http://arxiv.org/abs/1603.08512
Autor:
Roy, Anupam, Movva, Hema C. P., Satpati, Biswarup, Kim, Kyounghwan, Dey, Rik, Rai, Amritesh, Pramanik, Tanmoy, Guchhait, Samaresh, Tutuc, Emanuel, Banerjee, Sanjay K.
Publikováno v:
ACS Appl. Mater. Interfaces, 8 (11), pp 7396-7402 (2016)
We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth su
Externí odkaz:
http://arxiv.org/abs/1603.02656
Autor:
Roy, Anupam, Guchhait, Samaresh, Dey, Rik, Pramanik, Tanmoy, Hsieh, Cheng-Chih, Rai, Amritesh, Banerjee, Sanjay K.
Publikováno v:
ACS Nano, 9, 3772-3779 (2015)
Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport propert
Externí odkaz:
http://arxiv.org/abs/1509.08140
Autor:
Ghosh, Bahniman, Roy, Urmimala, Dey, Rik, Pramanik, Tanmoy, Register, Leonard F., Banerjee, Sanjay K.
In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the size of the ferromagnets.
Comment: This paper has been withdrawn by
Comment: This paper has been withdrawn by
Externí odkaz:
http://arxiv.org/abs/1411.5770