Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Prakash Deenapanray"'
Autor:
Prakash Deenapanray
Publikováno v:
Academia Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fac90a89225ac4e0a8174a1ec833f35
https://doi.org/10.20935/al5929
https://doi.org/10.20935/al5929
Publikováno v:
Environmental Development. 33:100489
Energy recovery from Municipal Solid Waste in Mauritius is considered as a solution to enhance the country's energy security and tackle imminent waste management issues. This study applies an Analytical Hierarchy Process model for identifying the bes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967d826cd30d93b4c673f5bcaaddcee4
https://doi.org/10.1016/j.envdev.2019.100489
https://doi.org/10.1016/j.envdev.2019.100489
Autor:
Prakash Deenapanray, Indoomatee Ramma
Like many Small Island Developing States (SIDS), Mauritius is highly vulnerable to the impacts of Climate Change (CC) and Climate Variability (CV). Particularly vulnerable are small-scale farmers who carry out rain-fed agriculture. While adaptation t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c9950896a6facce5710b999a446394
https://doi.org/10.4018/978-1-5225-0803-8.ch030
https://doi.org/10.4018/978-1-5225-0803-8.ch030
Publikováno v:
Semiconductor Science and Technology. 22:163-167
Silicon wafers implanted with low doses of manganese were annealed at 900 °C to distribute the Mn throughout the sample volume, and were subjected to carrier lifetime measurements. The Mn centres thus introduced were found to decrease the recombinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daf17137b576e023128838c2a0a04852
https://doi.org/10.1088/0268-1242/22/2/028
https://doi.org/10.1088/0268-1242/22/2/028
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1857-1865
Using a combination of etch rate, photoconductance, and deep level transient spectroscopy (DLTS) measurements, the authors have investigated the use of reactive ion etching (RIE) of dielectrics and Si in CHF3∕O2 and CHF3∕Ar plasmas for photovolta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3845c395cdc68289664ccd20e2329a
https://doi.org/10.1116/1.2333571
https://doi.org/10.1116/1.2333571
Autor:
Daniel Macdonald, Mladen Petravic, David Llewellyn, Qiang Gao, C. Crotti, Prakash Deenapanray
Publikováno v:
Chemical physics letters
425 (2006): 262.
info:cnr-pdr/source/autori:Petravic M., Gao Q., Llewellyn D., Deenapanray P.N.K., Macdonald D., Crotti C./titolo:Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors/doi:/rivista:Chemical physics letters (Print)/anno:2006/pagina_da:262/pagina_a:/intervallo_pagine:262/volume:425
425 (2006): 262.
info:cnr-pdr/source/autori:Petravic M., Gao Q., Llewellyn D., Deenapanray P.N.K., Macdonald D., Crotti C./titolo:Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors/doi:/rivista:Chemical physics letters (Print)/anno:2006/pagina_da:262/pagina_a:/intervallo_pagine:262/volume:425
We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s -> 1 pi* resonance of N-2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7518cf87774eb162216d21de884dc650
https://doi.org/10.1016/j.cplett.2006.05.056
https://doi.org/10.1016/j.cplett.2006.05.056
Publikováno v:
Applied Physics A. 84:351-367
Electrical properties and diffusivity of Hf in single crystal Si have been studied. Several deep level defects were found for Hf in both the upper and lower half of the silicon band gap, and their parameters were measured. Energy levels, concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebacf3a0e931057195377ff6c2fc822f
https://doi.org/10.1007/s00339-006-3637-6
https://doi.org/10.1007/s00339-006-3637-6
Publikováno v:
Physica B: Condensed Matter. :420-423
A study of optical, electrical, and diffusion properties of Hf and Zr in silicon is presented. Photoluminescence spectra were observed in Hf-implanted silicon. Isotope substitution confirms that the observed signal is Hf related. Several deep-level d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb37029eaeff5c09930f547563e9105
https://doi.org/10.1016/j.physb.2005.12.108
https://doi.org/10.1016/j.physb.2005.12.108
Publikováno v:
Physica B: Condensed Matter. :161-164
We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::457dafa4389c383f59bf5efcef2c4712
https://doi.org/10.1016/j.physb.2005.12.043
https://doi.org/10.1016/j.physb.2005.12.043
Autor:
Alexander V. Soldatov, Mladen Petravic, Y.-W. Yang, S. M. Durbin, Prakash Deenapanray, M. D. Fraser, P. A. Anderson
Publikováno v:
The Journal of Physical Chemistry B. 110:2984-2987
We have used synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to study the electronic structure of nitrogen-related defects in InN(0001). Several defect levels within the band gap or the conduction band of InN were cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1891c9ed651a63eb65fb2934570f242
https://doi.org/10.1021/jp057140l
https://doi.org/10.1021/jp057140l