Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Pragyey Kumar Kaushik"'
Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Abstract The presence of surface traps is an important phenomenon in AlGaN/GaN HEMT. The electrical and physical properties of these surface traps have been analyzed through the study of 2DEG electron concentration along with the variation of aluminu
Externí odkaz:
https://doaj.org/article/a1c649dcff7949e69e91da169519e408
Publikováno v:
IEEE Transactions on Electron Devices. 70:2934-2940
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f11e4a020a4ac9e2fc5b9c8abe9322
https://doi.org/10.1109/ted.2023.3268249
https://doi.org/10.1109/ted.2023.3268249
Publikováno v:
IEEE Transactions on Electron Devices. 69:6388-6393
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecaffae4d8e48ea26372be88fce9ecc
https://doi.org/10.1109/ted.2022.3208848
https://doi.org/10.1109/ted.2022.3208848
Publikováno v:
2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455bda2d62567acd77c526633da5259a
https://doi.org/10.1109/delcon57910.2023.10127296
https://doi.org/10.1109/delcon57910.2023.10127296
Publikováno v:
2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc44ca28ffd91acefed898987824e338
https://doi.org/10.1109/delcon57910.2023.10127539
https://doi.org/10.1109/delcon57910.2023.10127539
Publikováno v:
2022 IEEE Delhi Section Conference (DELCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14230c7234676d7e58b251e488c1ea8b
https://doi.org/10.1109/delcon54057.2022.9753115
https://doi.org/10.1109/delcon54057.2022.9753115
Publikováno v:
2022 IEEE Delhi Section Conference (DELCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40adf617f77a5b73d67efbbb77cda0f8
https://doi.org/10.1109/delcon54057.2022.9752961
https://doi.org/10.1109/delcon54057.2022.9752961
Publikováno v:
Engineering Research Express. 4:035011
This work explores the application of high-k dielectric to suppress off-state band-to-band tunneling (BTBT) and enhance the switching performance of conventional Drain-extended NMOS (C_DeNMOS). C_DeNMOS switching performance is limited by extended ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70c7671d83cdb1258aaf917eb0df0de
https://doi.org/10.1088/2631-8695/ac8147
https://doi.org/10.1088/2631-8695/ac8147
Autor:
Pragyey Kumar Kaushik, Shivansh Awasthi, Nitish Kumar, Umakant Goyal, Meena Mishra, Ankur Gupta, Ananjan Basu
Publikováno v:
Engineering Research Express. 4:025042
In this article, we have presented the effect of low gate bias on short circuit current gain h 21 beyond cutoff frequency in AlGaN/GaN HEMT. A small-signal model, based on its intrinsic and extrinsic parameter values, is simulated beyond the cutoff f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69482772e582dcdc326bce0e9744f3d1
https://doi.org/10.1088/2631-8695/ac743b
https://doi.org/10.1088/2631-8695/ac743b
Publikováno v:
Nanotechnology. 33:335201
In this article, a comprehensive analysis of the impact of electrothermal characteristics in the junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the Sentaurus TCAD. The combined study of the variation in thermal co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e57eeaa6a7ae191e8f79dd79a1e09e07
https://doi.org/10.1088/1361-6528/ac6df6
https://doi.org/10.1088/1361-6528/ac6df6