Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Pragya Prasad"'
Publikováno v:
Nanoscale. 12:23817-23823
We demonstrate a novel form of transfer characteristics in substrate engineered MoS2 field effect transistors. Robust hysteresis with stable threshold voltages and a large gate voltage window is observed, which is suppressed at low temperatures. We a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b9bf0c69bfff3e7765cd8be7027eff
https://doi.org/10.1039/d0nr05861k
https://doi.org/10.1039/d0nr05861k
Publikováno v:
Nanoscale. 12(46)
We demonstrate a novel form of transfer characteristics in substrate engineered MoS2 field effect transistors. Robust hysteresis with stable threshold voltages and a large gate voltage window is observed, which is suppressed at low temperatures. We a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ad0b6d837a6e1ca247a8db463c3b8b9b
https://pubmed.ncbi.nlm.nih.gov/33237076
https://pubmed.ncbi.nlm.nih.gov/33237076