Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Pradipta K. Nayak"'
Publikováno v:
ACS Applied Materials & Interfaces. 8:22751-22755
We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e69dc14d4bd43643cc05df925a8bd0b3
https://doi.org/10.1021/acsami.6b06498
https://doi.org/10.1021/acsami.6b06498
Publikováno v:
Advanced Materials. 28:7736-7744
Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0536f17cb95910469b95743398cb371
https://doi.org/10.1002/adma.201600503
https://doi.org/10.1002/adma.201600503
Autor:
Elamurugu Elangovan, Elvira Fortunato, Tito Busani, Alexandra Gonçalves, Pradipta K. Nayak, S. Parthiban, Daniela Nunes, Pedro Barquinha, Rodrigo Martins, Luís Pereira
Publikováno v:
Journal of Display Technology
In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with ~30 nm thick ZTO channel laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b46ee3a1f5fea00c16ff98d5344681b3
https://doi.org/10.1109/jdt.2013.2262096
https://doi.org/10.1109/jdt.2013.2262096
Publikováno v:
ACS Applied Materials & Interfaces. 5:3587-3590
It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cc896a40d2a99c06d779a691b6f40c2
https://doi.org/10.1021/am303235z
https://doi.org/10.1021/am303235z
Publikováno v:
Journal of Display Technology. 7:640-643
In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc-tin-oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54f97282b34903cde48e429136eae6f
https://doi.org/10.1109/jdt.2011.2160151
https://doi.org/10.1109/jdt.2011.2160151
Publikováno v:
physica status solidi (a). 207:1664-1667
The performance of top-gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4-vinyl-phenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6274a0940a58b3c21018d02d6f4c6265
https://doi.org/10.1002/pssa.200983714
https://doi.org/10.1002/pssa.200983714
Publikováno v:
Thin Solid Films. 516:8564-8568
We report fabrication of the c -axis oriented Ca 3 Co 3.95 Fe 0.05 O 9 + δ films by a simple sol–gel spin coating method. The films prepared in the temperature range of 650–700 °C show nonmetallic temperature dependence of resistivity in the wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d42fba0e6159fd3df7cfe5abc7f24757
https://doi.org/10.1016/j.tsf.2008.05.036
https://doi.org/10.1016/j.tsf.2008.05.036
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 28(20)
The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b3f049333bf65a7582c5406f8f35c37
https://pubmed.ncbi.nlm.nih.gov/26879813
https://pubmed.ncbi.nlm.nih.gov/26879813
Autor:
Husam N. Alshareef, Hala Al-Jawhari, Nini Wei, Zhenwei Wang, Pradipta K. Nayak, J. A. Caraveo-Frescas, Mohamed N. Hedhili
Publikováno v:
Scientific Reports
In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3adb6f4943de6acc0f321df5908e63aa
http://europepmc.org/articles/PMC4402970
http://europepmc.org/articles/PMC4402970
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. :192-197
Zinc arachidate (ZnA) multilayers transferred at different subphase pH and zinc ion concentrations in subphase are studied by X-ray reflection (XR) and FTIR studies. In this range of process parameters, the multilayers showed the presence of several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7a416466402672a8a796aa4eeb5baba
https://doi.org/10.1016/j.colsurfa.2005.10.074
https://doi.org/10.1016/j.colsurfa.2005.10.074