Circulating Currents in Wave-Wound Armatures

Autor: Mowdawalla, FN, Pradhan, GK

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______182::ddee9d7f89d67456c33cfb75354df2d9
http://eprints.iisc.ernet.in/43629/

Electrically Controlled Excitons, Charge Transfer Induced Trions, and Narrowband Emitters in MoSe 2 -WSe 2 Lateral Heterostructure.

Autor: Kundu B; Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India., Mondal P; Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India.; 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany., Tebbe D; 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany., Hasan MN; Department of Physics and Astronomy, Uppsala University, Uppsala 75120, Sweden., Chakraborty SK; Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India., Metzelaars M; Institute of Inorganic Chemistry, RWTH Aachen University, Aachen 52074, Germany., Kögerler P; Institute of Inorganic Chemistry, RWTH Aachen University, Aachen 52074, Germany., Karmakar D; Department of Physics and Astronomy, Uppsala University, Uppsala 75120, Sweden.; Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India.; Homi Bhabha National Institute, Trombay, Mumbai 400094, India., Pradhan GK; Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Odisha 751024, India., Stampfer C; 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany., Beschoten B; 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany., Waldecker L; 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany., Sahoo PK; Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India.

Publikováno v: Nano letters [Nano Lett] 2024 Nov 20; Vol. 24 (46), pp. 14615-14624. Date of Electronic Publication: 2024 Nov 11.

Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS 2 for Brain-Inspired Artificial Learning.

Autor: Mallik SK; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India., Padhan R; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India., Sahu MC; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India., Roy S; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India., Pradhan GK; Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar 751024, Odisha, India., Sahoo PK; Materials Science Centre, Quantum Materials and Device Research Laboratory, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India., Dash SP; Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden., Sahoo S; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Aug 02; Vol. 15 (30), pp. 36527-36538. Date of Electronic Publication: 2023 Jul 19.

Pulsed Carrier Gas Assisted High-Quality Synthetic 3 R -Phase Sword-like MoS 2 : A Versatile Optoelectronic Material.

Autor: Rajarapu R; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India., Barman PK; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India., Yadav R; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India., Biswas R; Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India., Devaraj M; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India., Poudyal S; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India., Biswal B; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India., Laxmi V; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India., Pradhan GK; Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha-751024, India., Raghunathan V; Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India., Nayak PK; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India.; Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India., Misra A; Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India.; 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India.

Publikováno v: ACS nano [ACS Nano] 2022 Dec 27; Vol. 16 (12), pp. 21366-21376. Date of Electronic Publication: 2022 Dec 05.

Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy.

Autor: Sahoo S; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085, India., Mallik SK; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085, India., Sahu MC; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085, India., Joseph A; Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India., Singh S; Department of Physics, University of North Texas, Denton, TX 76203, United States of America., Gupta SK; Computational Materials and Nanoscience Group, Department of Physics and Electronics, St. Xavier's College, Ahmedabad, 380009, India., Rout B; Department of Physics, University of North Texas, Denton, TX 76203, United States of America., Pradhan GK; Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha 751024, India., Sahoo S; Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India.; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085, India.

Publikováno v: Nanotechnology [Nanotechnology] 2020 Dec 11; Vol. 31 (50), pp. 505701.