Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Pradeep Namboodiri"'
Autor:
Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy, Xiqiao Wang, Joseph Fox, Richard M. Silver, Neil M. Zimmerman
Publikováno v:
AIP Advances, Vol 14, Iss 3, Pp 035121-035121-9 (2024)
P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the “ideal vacuum” of crystalline Si and because they are showing great promise as qubits of electron and nuclear spin. The GHz complex co
Externí odkaz:
https://doaj.org/article/9d29e3642a5d4b70a2e07acb14cda094
Autor:
Xiqiao Wang, Ehsan Khatami, Fan Fei, Jonathan Wyrick, Pradeep Namboodiri, Ranjit Kashid, Albert F. Rigosi, Garnett Bryant, Richard Silver
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-12 (2022)
Atomically precise artificial lattices of dopant-based quantum dots offer a tunable platform for simulations of interacting fermionic models. By leveraging advances in fabrication and atomic-state control, Wang et al. report quantum simulations of th
Externí odkaz:
https://doaj.org/article/b1c2a41d4c9c4435bc1e4b3deb2038b6
Autor:
Gheorghe Stan, Pradeep Namboodiri
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 12, Iss 1, Pp 1115-1126 (2021)
The open-loop (OL) variant of Kelvin probe force microscopy (KPFM) provides access to the voltage response of the electrostatic interaction between a conductive atomic force microscopy (AFM) probe and the investigated sample. The measured response ca
Externí odkaz:
https://doaj.org/article/a63b09d743dd403a9e74a2d5e9f6c935
Autor:
Pradeep Namboodiri, Gheorghe Stan
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 12, Iss 1, Pp 1115-1126 (2021)
Beilstein Journal of Nanotechnology, Vol 12, Iss 1, Pp 1115-1126 (2021)
The open-loop (OL) variant of Kelvin probe force microscopy (KPFM) provides access to the voltage response of the electrostatic interaction between a conductive atomic force microscopy (AFM) probe and the investigated sample. The measured response ca
Autor:
Ranjit V. Kashid, Richard M. Silver, Scott W. Schmucker, Pradeep Namboodiri, Jonathan Wyrick, Xiqiao Wang
Publikováno v:
Nano Letters. 18:7502-7508
Hydrogen atoms on a silicon surface, H–Si (100), behave as a resist that can be patterned with perfect atomic precision using a scanning tunneling microscope. When a hydrogen atom is removed in this manner, the underlying silicon presents a chemica
Publikováno v:
Novel Patterning Technologies 2021.
NIST is using atomically precise fabrication to develop electronic devices for use in quantum information processing and novel quantum materials. We are using hydrogen-based scanning probe lithography to enable deterministic placement of individual d
Autor:
Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit Vilas Kashid, Fan Fei, Joseph Fox, Richard Silver
The doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70dc20abef06126db6003d2b5b1b6ebb
Autor:
Michael Stewart, Xiqiao Wang, Richard M. Silver, Scott W. Schmucker, Ranjit V. Kashid, Joseph A. Hagmann, Jonathan Wyrick, Pradeep Namboodiri, Curt A. Richter
Publikováno v:
Physical Review B. 101
Autor:
Michael Stewart, Ranjit V. Kashid, Richard M. Silver, Scott W. Schmucker, Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Andrew Murphy
Publikováno v:
Communications Physics, Vol 3, Iss 1, Pp 1-9 (2020)
Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of t
Autor:
Jonathan Wyrick, Richard M. Silver, Pradeep Namboodiri, Joshua Schumacher, Michael Stewart, Alline F. Myers, Ranjit V. Kashid, Binhui Hu, Scott W. Schmucker, Xiqiao Wang
Publikováno v:
Physical review applied. 11
Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the