Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pradeep K. Govil"'
Autor:
Marie-Christine Zolcinski-Couet, Geoffrey O'Connor, Zoltan Gyarfas, James G. Tsacoyeanes, William Dornfeld, Pradeep K. Govil, Keith W. Andresen, Javed Sumra, Peter J. Baumgartner
Publikováno v:
Microlithographic Techniques in Integrated Circuit Fabrication II.
Micrascan (MS) IV is designed to provide superior Critical Dimension (CD) control & overlay performance at very high wafer throughputs for both 200 and 300mm wafers at low cost of ownership. This new system, targeted for sub-critical applications, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1068ad4a24e2e68d41208d5d77cbbc6e
https://doi.org/10.1117/12.404856
https://doi.org/10.1117/12.404856
Publikováno v:
SPIE Proceedings.
The analysis proposed attempts to identify the systematic and non-systematic errors in linewidth uniformity data and their magnitudes. Specific to step-and-scan systems are various error components to linewidth such as optical slot errors, stage scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efdee56493f213417dfa2e9f633ad596
https://doi.org/10.1117/12.389071
https://doi.org/10.1117/12.389071
Publikováno v:
SPIE Proceedings.
A significant contributor to linewidth control in a step and scan system is the focal plane nonuniformity. The various sources contributing to this focus nonuniformity such as wafer and reticle flatness will be discussed. Effective wafer flatness pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfa14696672e69b742b2a0297b52c22
https://doi.org/10.1117/12.310794
https://doi.org/10.1117/12.310794
Publikováno v:
SPIE Proceedings.
A 25 key focused Ga ion beam was used to induce deposition of tungsten on a gold absorber on boron nitride X-ray mask with submicron features to simulate the repair of clear defects. Tungsten was deposited to fill holes, extend lines and add missing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72186e8da5afb8b56a091359467f6fb6
https://doi.org/10.1117/12.20142
https://doi.org/10.1117/12.20142
Publikováno v:
IEEE Transactions on Electron Devices; 1974, Vol. 21 Issue 12, pc4-c4, 1p