Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Prachuryya Subash Das"'
Autor:
Prachuryya Subash Das, Deepjyoti Deb, Rupam Goswami, Santanu Sharma, Rajesh Saha, Hirakjyoti Choudhury
Publikováno v:
Tecnología en Marcha, Vol 36, Iss 6 (2023)
The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement of the VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due to a surrounding gate architecture built on
Externí odkaz:
https://doaj.org/article/ef572c55a6d34d17a7a75a60735571e8
Publikováno v:
Tecnología en Marcha, Vol 36, Iss 6 (2023)
This article presents a NOT logic gate circuit based on a single memristor, and analyzes it for different biological memristive samples based on extracted resistances. The simple resistorvoltage representation of the memristor in the logic circuit is
Externí odkaz:
https://doaj.org/article/facf3a29502549fcb771c61127fafcae
Autor:
Prajwalita Hazarika, Mrigashree Ray, Aditya Hazarika, Deepjyoti Deb, Prachuryya Subash Das, Hirakjyoti Choudhury, Rupam Goswami
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ff774d8c6b40e1c806a39955891885
https://doi.org/10.1007/s10854-023-10626-0
https://doi.org/10.1007/s10854-023-10626-0
Autor:
Dwipayan Nath, Deepjyoti Deb, Prachuryya Subash Das, Hirakjyoti Choudhury, Priyam Pathak, Rupam Goswami
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12bbceced636dd1073dfddfe13251d55
https://doi.org/10.1109/devic57758.2023.10134771
https://doi.org/10.1109/devic57758.2023.10134771