Zobrazeno 1 - 10
of 7 514
pro vyhledávání: '"Power mosfet"'
Autor:
Junji Cheng, Tao Zhong, Huan Li, Ping Li, Bo Yi, Haimeng Huang, Siliang Wang, Qiang Hu, Hongqiang Yang
Publikováno v:
IET Power Electronics, Vol 17, Iss 15, Pp 2584-2590 (2024)
Abstract An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to curr
Externí odkaz:
https://doaj.org/article/14c6ba938e2d4446bddf52aada84db6e
Publikováno v:
IET Power Electronics, Vol 17, Iss 15, Pp 2393-2404 (2024)
Abstract Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperatur
Externí odkaz:
https://doaj.org/article/9299c9a7be9f40d7a4569db7cece43a2
Publikováno v:
IET Power Electronics, Vol 17, Iss 14, Pp 1867-1881 (2024)
Abstract Series connection of Silicon Carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) is an interesting solution to design switches for voltages that are not yet commercially available or limited for single‐die devi
Externí odkaz:
https://doaj.org/article/87de61d6149d472a8b9e6191e3b6f1b6
Publikováno v:
IET Power Electronics, Vol 17, Iss 12, Pp 1507-1519 (2024)
Abstract Silicon carbide (SiC) MOSFETs are garnering widespread attention due to their superior performance in high‐temperature, high‐frequency, and high‐voltage applications, emerging as the preferred power semiconductor devices in converters
Externí odkaz:
https://doaj.org/article/5ebe9abcf7e9415c86ff4ca808f39510
Publikováno v:
IET Power Electronics, Vol 17, Iss 12, Pp 1594-1606 (2024)
Abstract Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data. However,
Externí odkaz:
https://doaj.org/article/df7633cc07944cc784ff3699016db39b
Publikováno v:
IET Power Electronics, Vol 17, Iss 11, Pp 1422-1433 (2024)
Abstract In order for full utilization of the switching devices and safe continued operation of the power converter at the same time, the junction temperature of the switching devices needs to be accurately monitored without shutting down the motor d
Externí odkaz:
https://doaj.org/article/94bd22ce591b453bb268697dd7a1f8b8
Publikováno v:
Power Electronic Devices and Components, Vol 9, Iss , Pp 100071- (2024)
Superjunction MOSFETs have been one of the promising switching components for realizing resonant converters. In spite of the numerous studies about the resonant converters in power electronics, the detailed current flow in the device has been still u
Externí odkaz:
https://doaj.org/article/d335ff0b60bf4c0d8fcfd504055a5f4f
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 834-854 (2024)
Abstract Silicon carbide (SiC) power metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a hi
Externí odkaz:
https://doaj.org/article/65a3d92daff8406a8b77e27ecb630687
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1353 (2024)
For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiatio
Externí odkaz:
https://doaj.org/article/af0a7a99248b4414ac1944a782fcf18c
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract Three‐phase ac choppers feature output voltage amplitude controllability and enable more compact system realizations compared to autotransformers. For the practical realization advantageously standard power transistor with unipolar voltage
Externí odkaz:
https://doaj.org/article/339ede1b7de04c32924096cd5168539f