Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Povolotskyi, Michael"'
Autor:
Chen, Chin-Yi, Tseng, Hsin-Ying, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rodwell, Mark J., Povolotskyi, Michael
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces. This work s
Externí odkaz:
http://arxiv.org/abs/2010.12964
Autor:
Chen, Chin-Yi, Ilatikhameneh, Hesameddin, Huang, Jun Z., Klimeck, Gerhard, Povolotskyi, Michael
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NE
Externí odkaz:
http://arxiv.org/abs/2002.04220
Akademický článek
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Autor:
Shen, Tingting, Valencia, Daniel, Wang, Qingxiao, Wang, Kuang-Chung, Povolotskyi, Michael, Kim, Moon J., Klimeck, Gerhard, Chen, Zhihong, Appenzeller, Joerg
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electrons drastically increases the electrical resistivity. In this work, we
Externí odkaz:
http://arxiv.org/abs/1810.06772
Akademický článek
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Publikováno v:
Journal of Applied Physics 123, 044303 (2018)
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost but good MS basis is usually very hard to obtain for atomist
Externí odkaz:
http://arxiv.org/abs/1710.08064
Autor:
Sahasrabudhe, Harshad, Novakovic, Bozidar, Nakamura, James, Fallahi, Saeed, Povolotskyi, Michael, Klimeck, Gerhard, Rahman, Rajib, Manfra, Michael J.
Publikováno v:
Phys. Rev. B 97, 085302 (2018)
Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desira
Externí odkaz:
http://arxiv.org/abs/1705.07005
Autor:
Wang, Kuang-Chung, Stanev, Teodor K., Valencia, Daniel, Charles, James, Henning, Alex, Sangwan, Vinod K., Lahiri, Aritra, Mejia, Daniel, Sarangapani, Prasad, Povolotskyi, Michael, Afzalian, Aryan, Maassen, Jesse, Klimeck, Gerhard, Hersam, Mark C., Lauhon, Lincoln J., Stern, Nathaniel P., Kubis, Tillmann
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electro
Externí odkaz:
http://arxiv.org/abs/1703.02191
Autor:
Ameen, Tarek A., Ilatikhameneh, Hesameddin, Huang, Jun Z., Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numerical modeling of such effects requires combining the non-equilibrium coh
Externí odkaz:
http://arxiv.org/abs/1702.01248
Autor:
Valencia, Daniel, Wilson, Evan, Jiang, Zhengping, Valencia-Zapata, Gustavo A., Klimeck, Gerhard, Povolotskyi, Michael
Publikováno v:
Phys. Rev. Applied 9, 044005 (2018)
Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model the resistivity of grain boundaries using the Embedded Atom Model, ti
Externí odkaz:
http://arxiv.org/abs/1701.04897