Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Pouvanart Taechakumput"'
Autor:
Pouvanart Taechakumput, Jeff Gaskell, Anthony C. Jones, Paul R. Chalker, Helen C. Aspinall, Stephen Taylor, Peter Nicholas Heys, Matthew Werner
Publikováno v:
Chemical Vapor Deposition. 13:684-690
Thin films of lanthanum zirconium oxide, LaxZr1–xO2–δ (x = 0.09 – 0.77) are deposited by liquid injection metal-organic (MO)CVD and atomic layer deposition (ALD) using toluene solutions of the precursors [(iPrCp)3La] and [(MeCp)2ZrMe(OMe)]. Au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11ae2814a9036621878b026fc3b35a75
https://doi.org/10.1002/cvde.200706637
https://doi.org/10.1002/cvde.200706637
Autor:
Peter Nicholas Heys, Paul R. Chalker, Matthew Werner, Pouvanart Taechakumput, Ruairi O'Kane, Rajesh Odedra, Anthony C. Jones, Stephen Taylor, Jeff Gaskell, Kate Black
Publikováno v:
Chemical Vapor Deposition. 13:609-617
Thin films of HfO2 are deposited by liquid injection metal-organic (MO) CVD and atomic layer deposition (ALD) using the new cyclopentadienyl precursors [(MeCp)2HfMe(OiPr)] and [(MeCp)2HfMe(mmp)] (mmp = OCMe2CH2OMe). Both precursors evaporate at moder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0518021b63a304e60aed1e67f4ca8fd9
https://doi.org/10.1002/cvde.200706589
https://doi.org/10.1002/cvde.200706589
Autor:
Paul R. Chalker, Kate Black, Stephen Taylor, Pouvanart Taechakumput, Richard J. Potter, Helen C. Aspinall, Jeffrey M. Gaskell, Anthony C. Jones, Szymon Przybylak
Publikováno v:
Chemistry of Materials. 19:4796-4803
Thin films of praseodymium aluminate (PrAlOx) and neodymium aluminate (NdAlOx) have been deposited by liquid injection metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) using the bimetallic alkoxide precursors [PrAl(OPr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a47fe16d703bb962a0eda3be8b6e976
https://doi.org/10.1021/cm0707556
https://doi.org/10.1021/cm0707556
Autor:
Pouvanart Taechakumput, Paul R. Chalker, Anthony C. Jones, Octavian Buiu, Stephen Taylor, Richard J. Potter
Publikováno v:
Microelectronics Reliability. 47:825-829
Optical and electrical properties of a set of high-k dielectric HfO2 films, deposited by liquid injection atomic layer deposition (LI-ALD) and post deposition annealed (PDA) in nitrogen (N2) ambient at various temperatures (400–600 °C), were inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0a94999294642979e4a9e9fba9f43f
https://doi.org/10.1016/j.microrel.2007.01.049
https://doi.org/10.1016/j.microrel.2007.01.049
Autor:
Cezhou Zhao, Susu Chen, Helen C. Aspinall, Stephen Taylor, Matthew Werner, Paul R. Chalker, Jeffrey M. Gaskell, Anthony C. Jones, Pouvanart Taechakumput
Publikováno v:
Journal of Nanomaterials, Vol 2012 (2012)
Thin films of neodymium aluminate (NdAlOx) have been deposited by liquid injection metalorganic chemical vapor deposition (MOCVD) using the bimetallic alkoxide precursor [NdAl(OPri)6(PriOH)]2. The effects of high-temperature postdeposition annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b413eba14ee0ae7f9aaa31f86fb47fd4
Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements
Autor:
Stephen Taylor, Cezhou Zhao, Chun Zhao, Paul R. Chalker, Pouvanart Taechakumput, Matthew Werner, J. Tao
Publikováno v:
Materials
In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6cb326d26740af1d8a6efd34b4364d7
https://pubmed.ncbi.nlm.nih.gov/28817021
https://pubmed.ncbi.nlm.nih.gov/28817021
Autor:
Stephen Taylor, Jeff Gaskell, Paul R. Chalker, Anthony C. Jones, Helen C. Aspinall, Peter Nicholas Heys, Matthew Werner, Pouvanart Taechakumput
Publikováno v:
ChemInform. 39
Thin films of lanthanum zirconium oxide, LaxZr1–xO2–δ (x = 0.09 – 0.77) are deposited by liquid injection metal-organic (MO)CVD and atomic layer deposition (ALD) using toluene solutions of the precursors [(iPrCp)3La] and [(MeCp)2ZrMe(OMe)]. Au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c1168b011fdf0c5284a0ff6eeb7893
https://doi.org/10.1002/chin.200809016
https://doi.org/10.1002/chin.200809016
Autor:
Jeff Gaskell, Paul R. Chalker, Stephen Taylor, Rajesh Odedra, Peter Nicholas Heys, Matthew Werner, Anthony C. Jones, Kate Black, Pouvanart Taechakumput, Ruairi O'Kane
Publikováno v:
ChemInform. 39
Thin films of HfO2 are deposited by liquid injection metal-organic (MO) CVD and atomic layer deposition (ALD) using the new cyclopentadienyl precursors [(MeCp)2HfMe(OiPr)] and [(MeCp)2HfMe(mmp)] (mmp = OCMe2CH2OMe). Both precursors evaporate at moder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0868173df047e49376dc1cd9ea8d05d2
https://doi.org/10.1002/chin.200807212
https://doi.org/10.1002/chin.200807212
Autor:
Jeff Gaskell, Paul R. Chalker, Stephen Taylor, Peter Nicholas Heys, Anthony C. Jones, Helen C. Aspinall, Pouvanart Taechakumput, R. Odedra
Publikováno v:
Applied Physics Letters. 91:112912
Thin films of lanthanum zirconium oxide, LaxZr1−xO2−δ (x=0.22,0.35,0.63), have been grown by liquid injection atomic layer deposition using [(PriCp)3La] and [(MeCp)2ZrMe(OMe)] precursors. At lower La atomic fractions (x=0.22) films were stabiliz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e196b8a6555164813d95ca55073b5c10
https://doi.org/10.1063/1.2784956
https://doi.org/10.1063/1.2784956
Autor:
Paul R. Chalker, Szymon Przybylak, Kate Black, Helen C. Aspinall, Hywel O. Davies, Pouvanart Taechakumput, Jeffrey M. Gaskell, Anthony C. Jones, Gary W. Critchlow, Stephen Taylor
Publikováno v:
Journal of Materials Chemistry. 16:3854
Lanthanum aluminate has been deposited for the first time by liquid injection atomic layer deposition (ALD) using a bimetallic alkoxide precursor, [LaAl(OiPr)6(iPrOH)]2 with H2O as oxygen source. The ALD growth rate was constant in the temperature ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb3eddad4fd422604106022a691e43d
https://doi.org/10.1039/b609129f
https://doi.org/10.1039/b609129f