Zobrazeno 1 - 5
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pro vyhledávání: '"Potera, Rahul"'
Autor:
Steinmann, Philipp, Atzeri, Marco, Ji, In Hwan, Langan, Jared, Myers, Kevin, Oldham, Neal, Park, Jae Hyung, Potera, Rahul, Rinderer, Caleb, van Brunt, Edward
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p65-69, 5p
Akademický článek
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Publikováno v:
IRPS
In this work, we studied the behavior of gate oxide (GOx) breakdown of 1200V 4H-SiC DMOSFETs by a screening process of voltage ramp (vramp). By employing vramp between 40-50V on a 50nm GOx, early failures below 50V, which could be infant or extrinsic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8659f5cd9fb30ea76e09d32050ad50c3
https://doi.org/10.1109/irps46558.2021.9405196
https://doi.org/10.1109/irps46558.2021.9405196
Publikováno v:
IRPS
SiC devices operate at 8x higher electric fields than Silicon devices, which subjects the passivation layers of SiC devices to these higher electric fields during voltage blocking states. We report a novel bimodal transient variation of reversebiased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f18d907240d343defac35cffad2425b
https://doi.org/10.1109/irps45951.2020.9129571
https://doi.org/10.1109/irps45951.2020.9129571
Publikováno v:
IEEE Power Electronics Magazine; 2019, Vol. 6 Issue: 1 p34-39, 6p