Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Postolova SV"'
Autor:
Mironov AY; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090., Silevitch DM; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Postolova SV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090., Burdastyh MV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, Russia, 630090., Proslier T; Institut de Recherches sur les lois Fundamentales de L'univers, Commissariat de L'énergie Atomique et aux Énergies Renouvelables-Saclay, Gif-sur-Yvette, France., Baturina TI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090., Rosenbaum TF; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Vinokur VM; Terra Quantum AG, St. Gallerstrasse 16A, 9400, Rorschach, Switzerland. vmvinokour@gmail.com.; Physics Department, City College of the City University of New York, 160 Convent Ave, New York, NY, 10031, USA. vmvinokour@gmail.com.
Publikováno v:
Scientific reports [Sci Rep] 2021 Aug 10; Vol. 11 (1), pp. 16181. Date of Electronic Publication: 2021 Aug 10.
Autor:
Zhao SYF; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Poccia N; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Panetta MG; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yu C; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Johnson JW; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yoo H; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Zhong R; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Gu GD; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Watanabe K; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Taniguchi T; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Postolova SV; Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia.; Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia., Vinokur VM; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.; Consortium for Advanced Science and Engineering, Office of Research and National Laboratories, University of Chicago, Chicago, Illinois 60637, USA., Kim P; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2020 Jun 19; Vol. 124 (24), pp. 249702.
Autor:
Burdastyh MV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Postolova SV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia., Proslier T; Institut de recherches sur les lois fundamentales de l'univers, Commissariat de l'énergie atomique et aux énergies renouvelables-Saclay, Gif-sur-Yvette, France., Ustavshikov SS; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia., Antonov AV; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia., Vinokur VM; Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL, 60439, USA. vinokour@anl.gov., Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia.
Publikováno v:
Scientific reports [Sci Rep] 2020 Jan 30; Vol. 10 (1), pp. 1471. Date of Electronic Publication: 2020 Jan 30.
Autor:
Zhao SYF; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Poccia N; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Panetta MG; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yu C; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Johnson JW; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yoo H; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Zhong R; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Gu GD; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Watanabe K; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Taniguchi T; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Postolova SV; Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia.; Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia., Vinokur VM; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.; Consortium for Advanced Science and Engineering, Office of Research and National Laboratories, University of Chicago, Chicago, Illinois 60637, USA., Kim P; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2019 Jun 21; Vol. 122 (24), pp. 247001.
Quantum contributions to the magnetoconductivity of critically disordered superconducting TiN films.
Autor:
Mironov AY; Department of Physics, Novosibirsk State University, 2 Pirogova Str., 630090 Novosibirsk, Russia. A V Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Av., 630090 Novosibirsk, Russia., Postolova SV, Baturina TI
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2018 Dec 05; Vol. 30 (48), pp. 485601. Date of Electronic Publication: 2018 Nov 12.
Autor:
Qiao L; School of Physics, Peking University, Beijing, 100871, China.; Collaborative Innovation Center of Quantum Matter, Beijing, China., Li D; School of Physics, Peking University, Beijing, 100871, China.; Collaborative Innovation Center of Quantum Matter, Beijing, China., Postolova SV; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia.; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia., Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia. mironov@isp.nsc.ru.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia. mironov@isp.nsc.ru., Vinokur V; Argonne National Laboratory, Materials Science Division, Lemont, IL, 60439, USA., Rosenstein B; Electrophysics Department, National Chiao Tung University, Hsinchu, 30050, Taiwan, Republic of China. baruchro@hotmail.com.; Physics Department, Bar-Ilan University, 52900, Ramat-Gan, Israel. baruchro@hotmail.com.
Publikováno v:
Scientific reports [Sci Rep] 2018 Sep 20; Vol. 8 (1), pp. 14104. Date of Electronic Publication: 2018 Sep 20.
Autor:
Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Silevitch DM; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Proslier T; Institut de recherches sur les lois fundamentales de l'univers, Commissariat de l'énergie atomique et aux énergies renouvelables-Saclay, Gif-sur-Yvette, France., Postolova SV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Burdastyh MV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Gutakovskii AK; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Rosenbaum TF; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Vinokur VV; Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL, 60439, USA. vinokour@anl.gov.; Computation Institute, University of Chicago, 5735 S. Ellis Avenue, Chicago, IL, 60637, USA. vinokour@anl.gov., Baturina TI; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia.; The James Franck Institute and Department of Physics, The University of Chicago, Chicago, IL, 60637, USA.; Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales Nicolás Cabrera and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain.
Publikováno v:
Scientific reports [Sci Rep] 2018 Mar 06; Vol. 8 (1), pp. 4082. Date of Electronic Publication: 2018 Mar 06.
Autor:
Postolova SV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia., Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia., Baklanov MR; North China University of Technology, Beijing, 100144, China., Vinokur VM; Argonne National Laboratory, Materials Science Division, Lemont, IL, 60439, USA. vinokour@anl.gov., Baturina TI; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia.; Departamento de Fisica de la MateriaCondensada, Instituto de Ciencia de Materiales Nicolas Cabrera and Condensed Matter Physics Center (IFIMAC), Universidad Autonoma de Madrid, Madrid, E-28049, Spain.
Publikováno v:
Scientific reports [Sci Rep] 2017 May 11; Vol. 7 (1), pp. 1718. Date of Electronic Publication: 2017 May 11.