Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Postolova SV"'
Autor:
Mironov AY; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090., Silevitch DM; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Postolova SV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090., Burdastyh MV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, Russia, 630090., Proslier T; Institut de Recherches sur les lois Fundamentales de L'univers, Commissariat de L'énergie Atomique et aux Énergies Renouvelables-Saclay, Gif-sur-Yvette, France., Baturina TI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, Russia, 630090., Rosenbaum TF; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Vinokur VM; Terra Quantum AG, St. Gallerstrasse 16A, 9400, Rorschach, Switzerland. vmvinokour@gmail.com.; Physics Department, City College of the City University of New York, 160 Convent Ave, New York, NY, 10031, USA. vmvinokour@gmail.com.
Publikováno v:
Scientific reports [Sci Rep] 2021 Aug 10; Vol. 11 (1), pp. 16181. Date of Electronic Publication: 2021 Aug 10.
Autor:
Zhao SYF; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Poccia N; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Panetta MG; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yu C; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Johnson JW; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yoo H; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Zhong R; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Gu GD; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Watanabe K; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Taniguchi T; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Postolova SV; Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia.; Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia., Vinokur VM; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.; Consortium for Advanced Science and Engineering, Office of Research and National Laboratories, University of Chicago, Chicago, Illinois 60637, USA., Kim P; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2020 Jun 19; Vol. 124 (24), pp. 249702.
Autor:
Burdastyh MV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Postolova SV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia., Proslier T; Institut de recherches sur les lois fundamentales de l'univers, Commissariat de l'énergie atomique et aux énergies renouvelables-Saclay, Gif-sur-Yvette, France., Ustavshikov SS; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia., Antonov AV; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia., Vinokur VM; Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL, 60439, USA. vinokour@anl.gov., Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia.
Publikováno v:
Scientific reports [Sci Rep] 2020 Jan 30; Vol. 10 (1), pp. 1471. Date of Electronic Publication: 2020 Jan 30.
Autor:
Zhao SYF; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Poccia N; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Panetta MG; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yu C; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Johnson JW; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Yoo H; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA., Zhong R; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Gu GD; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA., Watanabe K; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Taniguchi T; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan., Postolova SV; Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia.; Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia., Vinokur VM; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.; Consortium for Advanced Science and Engineering, Office of Research and National Laboratories, University of Chicago, Chicago, Illinois 60637, USA., Kim P; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2019 Jun 21; Vol. 122 (24), pp. 247001.
Quantum contributions to the magnetoconductivity of critically disordered superconducting TiN films.
Autor:
Mironov AY; Department of Physics, Novosibirsk State University, 2 Pirogova Str., 630090 Novosibirsk, Russia. A V Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Av., 630090 Novosibirsk, Russia., Postolova SV, Baturina TI
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2018 Dec 05; Vol. 30 (48), pp. 485601. Date of Electronic Publication: 2018 Nov 12.
Autor:
Qiao L; School of Physics, Peking University, Beijing, 100871, China.; Collaborative Innovation Center of Quantum Matter, Beijing, China., Li D; School of Physics, Peking University, Beijing, 100871, China.; Collaborative Innovation Center of Quantum Matter, Beijing, China., Postolova SV; Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia.; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia., Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia. mironov@isp.nsc.ru.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia. mironov@isp.nsc.ru., Vinokur V; Argonne National Laboratory, Materials Science Division, Lemont, IL, 60439, USA., Rosenstein B; Electrophysics Department, National Chiao Tung University, Hsinchu, 30050, Taiwan, Republic of China. baruchro@hotmail.com.; Physics Department, Bar-Ilan University, 52900, Ramat-Gan, Israel. baruchro@hotmail.com.
Publikováno v:
Scientific reports [Sci Rep] 2018 Sep 20; Vol. 8 (1), pp. 14104. Date of Electronic Publication: 2018 Sep 20.
Autor:
Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Silevitch DM; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Proslier T; Institut de recherches sur les lois fundamentales de l'univers, Commissariat de l'énergie atomique et aux énergies renouvelables-Saclay, Gif-sur-Yvette, France., Postolova SV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Burdastyh MV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Gutakovskii AK; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia., Rosenbaum TF; Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA, 91125, USA., Vinokur VV; Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL, 60439, USA. vinokour@anl.gov.; Computation Institute, University of Chicago, 5735 S. Ellis Avenue, Chicago, IL, 60637, USA. vinokour@anl.gov., Baturina TI; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.; Novosibirsk State University, Pirogova str. 2, Novosibirsk, 630090, Russia.; The James Franck Institute and Department of Physics, The University of Chicago, Chicago, IL, 60637, USA.; Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales Nicolás Cabrera and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain.
Publikováno v:
Scientific reports [Sci Rep] 2018 Mar 06; Vol. 8 (1), pp. 4082. Date of Electronic Publication: 2018 Mar 06.
Autor:
Postolova SV; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia., Mironov AY; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia., Baklanov MR; North China University of Technology, Beijing, 100144, China., Vinokur VM; Argonne National Laboratory, Materials Science Division, Lemont, IL, 60439, USA. vinokour@anl.gov., Baturina TI; A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.; Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russia.; Departamento de Fisica de la MateriaCondensada, Instituto de Ciencia de Materiales Nicolas Cabrera and Condensed Matter Physics Center (IFIMAC), Universidad Autonoma de Madrid, Madrid, E-28049, Spain.
Publikováno v:
Scientific reports [Sci Rep] 2017 May 11; Vol. 7 (1), pp. 1718. Date of Electronic Publication: 2017 May 11.
Autor:
Yadav, Sachin1,2 (AUTHOR), Aloysius, R. P.1,2 (AUTHOR), Gupta, Govind1,2 (AUTHOR), Sahoo, Sangeeta1,2 (AUTHOR) sahoos@nplindia.org
Publikováno v:
Scientific Reports. 12/20/2023, Vol. 13 Issue 1, p1-11. 11p.
Autor:
Das, Rabindra N.1 (AUTHOR) Rabindra.das@ll.mit.edu, Bolkhovsky, Vladimir1 (AUTHOR), Wynn, Alex1 (AUTHOR), Birenbaum, Jeffrey1 (AUTHOR), Golden, Evan1 (AUTHOR), Rastogi, Ravi1 (AUTHOR), Zarr, Scott1 (AUTHOR), Tyrrell, Brian1 (AUTHOR), Johnson, Leonard M.1 (AUTHOR), Schwartz, Mollie E.1 (AUTHOR), Yoder, Jonilyn L.1 (AUTHOR), Juodawlkis, Paul W.1 (AUTHOR)
Publikováno v:
Scientific Reports. 7/21/2023, Vol. 13 Issue 1, p1-9. 9p.