Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Possanzini, C."'
Autor:
Brinker, A. C. den, Der Sarkissian, H. H., Wülbern, J. H., Balmaekers, B., Padalko, M., Sénégas, J., Springorum, R., Possanzini, C.
In order to obtain insights into the feasibility of replacing ECG-guided triggering in magnetic resonance imaging (MRI) by a system based on video photoplethysmography (PPG), PPG and ECG data were collected from volunteers in an MRI scanner. PPG wave
Externí odkaz:
http://arxiv.org/abs/2306.09879
Autor:
de Lang, D. T. N., Ponomarenko, L. A., de Visser, A., Possanzini, C., Olsthoorn, S. M., Pruisken, A. M. M.
Publikováno v:
Physica E 12 (2002) 666-669
We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance \rho_xy which remains quantized at
Externí odkaz:
http://arxiv.org/abs/cond-mat/0106375
Publikováno v:
Semicond. Sci.Technol. v16, 386 (2001)
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as a funct
Externí odkaz:
http://arxiv.org/abs/cond-mat/0103283
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a func
Externí odkaz:
http://arxiv.org/abs/cond-mat/0002436
15th International Conference on High Magnetic Fields in Semiconductor Physics, August 2002, Oxford, UK
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1674::bf3c609eec48b7869916c6eb4998031b
https://nrc-publications.canada.ca/eng/view/object/?id=09454713-3454-4e7f-9b4e-5354ee193a4d
https://nrc-publications.canada.ca/eng/view/object/?id=09454713-3454-4e7f-9b4e-5354ee193a4d
Autor:
Possanzini, C.
Contains fulltext : 60695.pdf (Publisher’s version ) (Open Access) RU Radboud Universiteit Nijmegen, 28 juni 2004 Promotor : Maan, J.C. 109 p.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::77a68b41e303a2b4094d1b08299d19f8
https://hdl.handle.net/2066/60695
https://hdl.handle.net/2066/60695
Autor:
Possanzini, C., Fletcher, R., Tsaousidou, M., Coleridge, P.T., Williams, R.L., Feng, Y., Maan, J.C.
Publikováno v:
Physical Review. B, Condensed Matter and Materials Physics, 69, 19, pp. 195306-1-195306-9
Physical Review. B, Condensed Matter and Materials Physics, 69, 195306-1-195306-9
Physical Review. B, Condensed Matter and Materials Physics, 69, 195306-1-195306-9
Contains fulltext : 60252.pdf (author's version ) (Open Access) We report thermopower measurements in zero and low magnetic fields for a p-type Si/Si1-xGex heterostructure. The diffusion components of both the longitudinal and transverse components a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0fc2b0a5013aa489f840a0f667aa37d8
https://hdl.handle.net/2066/60252
https://hdl.handle.net/2066/60252
Autor:
Jonge, J. de, Possanzini, C., Olsthoorn, S.M., Maan, J.C., Mikhailov, G.M., Aparshina, L.I., Chernykh, A.V., Malikov, I.V., Vinnichenko, V.Y.
Publikováno v:
Semimag 15: Proceedings of the 15th International Conference on High Magnetic Fields in Semiconductor Physics, Oxford, Great Britain, 5-8 August 2002
Semimag 15: Proceedings of the 15th International Conference on High Magnetic Fields in Semiconductor Physics, Oxford, Great Britain, 5-8 August 2002. [S.l.] : [S.n.]
Semimag 15: Proceedings of the 15th International Conference on High Magnetic Fields in Semiconductor Physics, Oxford, Great Britain, 5-8 August 2002. [S.l.] : [S.n.]
Item does not contain fulltext Semimag 15, 05 augustus 2002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ea7f091bd781783e7db0f4d6a561d4d1
https://hdl.handle.net/2066/115580
https://hdl.handle.net/2066/115580
Autor:
Possanzini, C., Ponomarenko, L., de Lang, D., de Visser, A., Olsthoorn, S. M., Fletcher, R., Feng, Y., Coleridge, P. T., Williams, Robin, Maan, J. C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1674::53caf10306c4c0d65cd5ce9a64a7aeec
https://nrc-publications.canada.ca/eng/view/object/?id=0f156945-3f94-4955-9431-4ef072cfa51c
https://nrc-publications.canada.ca/eng/view/object/?id=0f156945-3f94-4955-9431-4ef072cfa51c
Autor:
Possanzini, C., Ponomarenko, L., de Lang, D.T.N., de Visser, A., Olsthoorn, S.M., Fletcher, R., Feng, Y., Coleridge, P.T., Williams, R.L., Maan, J.C.
Publikováno v:
Workbook of the 14th International Conference on the Electronic Properties of Two-Dimensional Systems.-Part 1, 175-178
STARTPAGE=175;ENDPAGE=178;TITLE=Workbook of the 14th International Conference on the Electronic Properties of Two-Dimensional Systems.-Part 1
STARTPAGE=175;ENDPAGE=178;TITLE=Workbook of the 14th International Conference on the Electronic Properties of Two-Dimensional Systems.-Part 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::eb5898cb466c255eb73b8c60a390b4ad
https://dare.uva.nl/personal/pure/en/publications/scaling-behaviour-of-metalinsulator-transitions-in-a-sisige-two-dimensional-hole-gas(110cbf35-143b-4cd8-898e-50cfa51254d0).html
https://dare.uva.nl/personal/pure/en/publications/scaling-behaviour-of-metalinsulator-transitions-in-a-sisige-two-dimensional-hole-gas(110cbf35-143b-4cd8-898e-50cfa51254d0).html