Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Poshan Kumar Reddy"'
Autor:
Srikant Kumar Mohanty, Debashis Panda, K. Poshan Kumar Reddy, Po-Tsung Lee, Chien-Hung Wu, Kow-Ming Chang
Publikováno v:
Ceramics International. 49:16909-16917
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0100c5303537ff1193dc990830e0642a
https://doi.org/10.1016/j.ceramint.2023.02.052
https://doi.org/10.1016/j.ceramint.2023.02.052
Autor:
Kow-ming Chang, Jia-Chuan Lin, Poshan Kumar Reddy, Om Kumar Prasad, Chien-Hung Wu, Srikant Kumar Mohanty
Publikováno v:
IEEE Electron Device Letters. 42:1770-1773
Gradual conduction tuning with a large memory window is essential for realizing multilevel switching memristive devices. In this work, we demonstrated 3-bit per cell storage capability with excellent endurance and retention behavior of AlN/AlO memris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f534bdfc730bf4b3971b2d785d0f16
https://doi.org/10.1109/led.2021.3125151
https://doi.org/10.1109/led.2021.3125151
Autor:
Srikant Kumar Mohanty, Kuppam Poshan Kumar Reddy, Chien-Hung Wu, Po-Tsung Lee, Kow-Ming Chang, Prabhakar Busa, Yaswanth Kuthati
Publikováno v:
Electronics; Volume 11; Issue 21; Pages: 3432
In this work, we investigated the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of the aluminum nitride (AlN) based conductive bridge random access memory. The WNx barrier layer limits the diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::243fbef0798040c7821664d240661ac3
Autor:
Poshan Kumar Reddy, K., Rameez, Mohammad, Wang, Tsai-Te, Wang, Kuangye, Yan-Ru Lin, Eric, Lin, Ming-Chang, Wei-Guang Diau, Eric, Hung, Chen-Hsiung, Chueh, Yun-Lun, Pande, Krishna P., Lee, Po-Tsung
Publikováno v:
In Materials Letters 15 April 2022 313
Autor:
Poshan Kumar Reddy Kuppam, K. M. M. D. K. Kimbulapitiya, Srikanth Vuppala, Kuangye Wang, G. Phaneendra Reddy, Krishna P. Pande, Po-Tsung Lee, Yun-Lun Chueh
Publikováno v:
Catalysts, Vol 12, Iss 58, p 58 (2022)
Catalysts; Volume 12; Issue 1; Pages: 58
Catalysts; Volume 12; Issue 1; Pages: 58
Replacing precious metals with low-cost metals is the best solution for large scale production. Copper is known for its excellent conductivity and thermal management applications. When it comes to hydrogen evolution reaction, it is highly unstable, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51193e6cc14ee684c54cd5fb1b5c8457
https://www.mdpi.com/2073-4344/12/1/58
https://www.mdpi.com/2073-4344/12/1/58
Akademický článek
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Autor:
K. Poshan Kumar Reddy, Mohammad Rameez, Tsai-Te Wang, Kuangye Wang, Eric Yan-Ru Lin, Ming-Chang Lin, Eric Wei-Guang Diau, Chen-Hsiung Hung, Yun-Lun Chueh, Krishna P. Pande, Po-Tsung Lee
Publikováno v:
Materials Letters. 313:131838
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c7799358678d4cd6f5db72970b7db56
https://doi.org/10.1016/j.matlet.2022.131838
https://doi.org/10.1016/j.matlet.2022.131838