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SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

Autor: La Via F., Izzo G., Mauceri M., Pistone G., Condorelli G., Perdicaro L., Abbondanza G., Portuese F., Galvagno G., Di Franco S., Calcagno L., Foti G., Valente G.L., Crippa D.

Publikováno v: Materials science forum 600-603 (2009): 123–126.
info:cnr-pdr/source/autori:La Via F., Izzo G., Mauceri M., Pistone G., Condorelli G., Perdicaro L., Abbondanza G., Portuese F., Galvagno G., Di Franco S., Calcagno L., Foti G., Valente G.L., Crippa D./titolo:SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate./doi:/rivista:Materials science forum/anno:2009/pagina_da:123/pagina_a:126/intervallo_pagine:123–126/volume:600-603

The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::2f2108092783541972c4f90cca9cb382
https://publications.cnr.it/doc/220714

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Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions

Autor: Condorelli G., Mauceri M., Pistone G., Perdicaro L.M.S., Abbondanza G., Portuese F., Valente G.L., Crippa D., Giannazzo F., La Via F.

Publikováno v: Materials science forum 600-603 (2009): 127–130.
info:cnr-pdr/source/autori:Condorelli G., Mauceri M., Pistone G., Perdicaro L.M.S., Abbondanza G., Portuese F., Valente G.L., Crippa D., Giannazzo F., La Via F./titolo:Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions/doi:/rivista:Materials science forum/anno:2009/pagina_da:127/pagina_a:130/intervallo_pagine:127–130/volume:600-603

A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N 2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::5f01e81a62efde3b1c9ed0057908199a
https://publications.cnr.it/doc/220712

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Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization

Autor: Calcagno L, Izzo G, Litrico G, Galvagno G, Firrincieli A, Di Franco S, Mauceri M, Leone S, Pistone G, Condorelli G, Portuese F, Abbondanza G, Foti G, La Via F

Publikováno v: 556-5 (2007): 137–140.
info:cnr-pdr/source/autori:Calcagno L, Izzo G, Litrico G, Galvagno G, Firrincieli A, Di Franco S, Mauceri M, Leone S, Pistone G, Condorelli G, Portuese F, Abbondanza G, Foti G and La Via F/titolo:Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization/doi:/rivista:/anno:2007/pagina_da:137/pagina_a:140/intervallo_pagine:137–140/volume:556-5

High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si ratio on this epitaxial growth process has been studied by optical and electrical measurements. Optical microsc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::b7a864f3c7459eb058f3d294fec3a5ed
https://publications.cnr.it/doc/65395

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Very High Growth Rate Epitaxy Processes with Chlorine Addition

Autor: La Via F, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, G. Galvagno, Di Franco S, Calcagno L, Foti G, Valente GL, Crippa D

Publikováno v: 556-5 (2007): 157–160.
info:cnr-pdr/source/autori:La Via F, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, G. Galvagno, Di Franco S, Calcagno L, Foti G, Valente GL and Crippa D/titolo:Very High Growth Rate Epitaxy Processes with Chlorine Addition/doi:/rivista:/anno:2007/pagina_da:157/pagina_a:160/intervallo_pagine:157–160/volume:556-5

The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 µm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been charac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::3dbbaf4ab9100aac875b60f74e719aa1
http://www.cnr.it/prodotto/i/65394

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Carbonization Study of Different Silicon Orientations

Autor: Severino A, Bongiorno C, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, Foti G, La Via F

Publikováno v: 556-5 (2007): 171–174.
info:cnr-pdr/source/autori:Severino A, Bongiorno C, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, Foti G, and La Via F/titolo:Carbonization Study of Different Silicon Orientations/doi:/rivista:/anno:2007/pagina_da:171/pagina_a:174/intervallo_pagine:171–174/volume:556-5

3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::7bd1a02439f178e433f343fefca38991
http://www.cnr.it/prodotto/i/65393

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Temperature dependence of the c-axis drift mobility in 4H-SIC

Autor: Galvagno G, Roccaforte F, Ruggiero A, Calcagno L, Zanetti E, Saggio M, Portuese F, La Via F

Publikováno v: Microelectronic engineering 83 (2006): 45–47.
info:cnr-pdr/source/autori:Galvagno G, Roccaforte F, Ruggiero A, Calcagno L, Zanetti E, Saggio M, Portuese F, La Via F/titolo:Temperature dependence of the c-axis drift mobility in 4H-SIC/doi:/rivista:Microelectronic engineering/anno:2006/pagina_da:45/pagina_a:47/intervallo_pagine:45–47/volume:83

The electrical characteristics of 4H-SiC Schottky diodes were performed in the temperature range 80-700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm(2)/(V s) was found, which decrea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::c09c22a6e5c3baa8524afeba0c4c5a39
http://www.cnr.it/prodotto/i/35824

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