Zobrazeno 1 - 10
of 1 126
pro vyhledávání: '"Portal, J."'
Autor:
Esmanhotto, E., Hirtzlin, T., Castellani, N., Martin, S., Giraud, B., Andrieu, F., Nodin, J. F., Querlioz, D., Portal, J-M., Vianello, E.
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experime
Externí odkaz:
http://arxiv.org/abs/2203.01680
Autor:
Ezzadeen, M., Bosch, D., Giraud, B., Barraud, S., Noel, J. -P., Lattard, D., Lacord, J., Portal, J. -M., Andrieu, F.
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed bas
Externí odkaz:
http://arxiv.org/abs/2012.00061
Akademický článek
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Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures February 2022 136
Autor:
Cosson, E., Vicaut, E., Berkane, N., Cianganu, T.L., Baudry, C., Portal, J.-J., Boujenah, J., Valensi, P., Carbillon, L.
Publikováno v:
In Diabetes & Metabolism May 2021 47(3)
Autor:
Cosson, E. ⁎, Vicaut, E., Sandre-Banon, D., Gary, F., Pharisien, I., Portal, J.-J., Baudry, C., Cussac-Pillegand, C., Costeniuc, D., Valensi, P., Carbillon, L.
Publikováno v:
In Diabetes & Metabolism September 2020 46(4):311-318
A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determi
Externí odkaz:
http://arxiv.org/abs/1402.0217
Autor:
Catheline, J.-M., Fysekidis, M., Bendacha, Y., Portal, J.-J., Huten, N., Chouillard, E., Gugenheim, J., Fourtanier, G., Arapis, K., Msika, S., Fabre, J.M., Sodji, M., Vicaut, E., Dbouk, R., Roussel, J., Cohen, R.
Publikováno v:
In Journal of Visceral Surgery December 2019 156(6):497-506
Autor:
Catheline, J.-M., Fysekidis, M., Bendacha, Y., Portal, J.-J., Huten, N., Chouillard, E., Gugenheim, J., Fourtanier, G., Arapis, K., Msika, S., Fabre, J.M., Sodji, M., Vicaut, E., Dbouk, R., Roussel, J., Cohen, R.
Publikováno v:
In Journal de Chirurgie Viscérale December 2019 156(6):532-542
Autor:
Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B, Levin, A. D., Krupko, Y., Portal, J. C., Mikhailov, N. N., Dvoretsky, S. A.
We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional topologic
Externí odkaz:
http://arxiv.org/abs/1308.4356