Zobrazeno 1 - 10
of 1 030
pro vyhledávání: '"Porowski, S"'
Autor:
Sadovyi, B., Sadovyi, P., Petrusha, I., Dziecielewski, I., Porowski, S., Turkevich, V., Nikolenko, A., Tsykaniuk, B., Strelchuk, V., Grzegory, I.
Publikováno v:
In Journal of Crystal Growth 1 February 2019 507:77-86
Autor:
Porowski, S., Sadovyi, B., Karbovnyk, I., Gierlotka, S., Rzoska, S.J., Petrusha, I., Stratiichuk, D., Turkevich, V., Grzegory, I.
Publikováno v:
In Journal of Crystal Growth 1 January 2019 505:5-9
Autor:
Wolos, A., Wilamowski, Z., Skierbiszewski, C., Drabinska, A., Lucznik, B., Grzegory, I., Porowski, S.
Publikováno v:
Physica B 406, 2548 (2011)
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures.
Externí odkaz:
http://arxiv.org/abs/1012.4999
Autor:
Wolos, A., Wilamowski, Z., Piersa, M., Strupinski, W., Lucznik, B., Grzegory, I., Porowski, S.
Publikováno v:
Phys. Rev. B 83, 165206 (2011)
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-related bands are formed below the bottom of the GaN conduction band.
Externí odkaz:
http://arxiv.org/abs/1012.5018
Autor:
Kowalski, B. J., Kowalik, I. A., Iwanowski, R. J., Lusakowska, E., Sawicki, M., Sadowski, J., Grzegory, I., Porowski, S.
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band
Externí odkaz:
http://arxiv.org/abs/cond-mat/0408111
Autor:
Kowalski, B. J., Kowalik, I. A., Iwanowski, R. J., Sadowski, J., Kanski, J., Orlowski, B. A., Ghijsen, J., Mirabella, F., Lusakowska, E., Perlin, P., Porowski, S., Grzegory, I., Leszczynski, M.
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revea
Externí odkaz:
http://arxiv.org/abs/cond-mat/0408090
Autor:
POROWSKI, S.1 sylvek@unipress.waw.pl
Publikováno v:
Acta Physica Polonica: A. Nov2022, Vol. 142 Issue 5, p594-596. 3p.
Autor:
Sadovyi, B., Amilusik, M., Litwin-Staszewska, E., Bockowski, M., Grzegory, I., Porowski, S., Fijalkowski, M., Rudyk, V., Tsybulskyi, V., Panasyuk, M., Karbovnyk, I., Kapustianyk, V.
Publikováno v:
In Optical Materials August 2016 58:491-496
Autor:
Porowski, S., Sadovyi, B., Gierlotka, S., Rzoska, S.J., Grzegory, I., Petrusha, I., Turkevich, V., Stratiichuk, D.
Publikováno v:
In Journal of Physics and Chemistry of Solids October 2015 85:138-143
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