Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Pontus Stenberg"'
Autor:
Pitsiri Sukkaew, Ildikó Farkas, Lars Ojamäe, Henrik Pedersen, Pontus Stenberg, Olof Kordina, Erik Janzén, Örjan Danielsson
Publikováno v:
The Journal of Physical Chemistry C. 121:2711-2720
The use of chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has diminished the problem of homogenous gas phase nucleation, mainly the formation of Si droplets, in CVD of SiC by replacin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc88d9b300a3a9b6aef040887126cd0b
https://doi.org/10.1021/acs.jpcc.6b10849
https://doi.org/10.1021/acs.jpcc.6b10849
Autor:
Pontus Stenberg, Pitsiri Sukkaew, Lars Ojamäe, Erik Janzén, Örjan Danielsson, Edvin Erdtman, Henrik Pedersen
Publikováno v:
Journal of Materials Chemistry C. 5:5818-5823
Chemical Vapor Deposition (CVD) is one of the technology platforms forming the backbone of the semiconductor industry and is vital in the production of electronic devices. To upscale a CVD process from the lab to the fab, large area uniformity and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23908cd963b1eda79d66999ef56be80a
https://doi.org/10.1039/c7tc00138j
https://doi.org/10.1039/c7tc00138j
Autor:
Nguyen Tien Son, Hiroshi Abe, Valdas Jokubavicius, Takeshi Ohshima, Jawad ul Hassan, Ivan Gueorguiev Ivanov, Pontus Stenberg
The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promising defect for applications in quantum communication. In the positive charge state, CSiVC+ can be engineered to produce ultrabright single photon source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0adc3c95b13f544ea12c9195be4c88c7
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-160181
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-160181
Autor:
Takeshi Ohshima, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Pontus Stenberg, Jawad ul Hassan, Valdas Jokubavicius
The negative silicon vacancy (V-Si(-)) in SiC has recently emerged as a promising defect for quantum communication and room-temperature quantum sensing. However, its electronic structure is still not well characterized. While the isolated Si vacancy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00a6b8673726ac243a965389280a0090
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-155906
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-155906
Autor:
Henrik Pedersen, Robin Karhu, Pontus Stenberg, Ivan Gueorguiev Ivanov, Ian Don Booker, Erik Janzén
Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and electrically by deep-level transient spectroscopy (DLTS) and minority carrier transient spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0804d3228d027c17aa012e2c0a2eb57c
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-147378
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-147378
Autor:
Pontus Stenberg
For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b9351b40471d73f8a3cf050110dcb9e
https://doi.org/10.3384/diss.diva-133832
https://doi.org/10.3384/diss.diva-133832
Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF4 as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas phase, making SiF4 an interesting Si precursor. However, before
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd191c632a6bc470a30d52b34cf8dd3
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-138489
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-138489
Autor:
Heung Taek Bae, Pontus Stenberg, Seo Yong Ha, Jawad ul Hassan, Erik Janzén, Jianwu Sun, Peder Bergman, Ildikó Farkas, Olle Kordina, Louise Lilja, Ickchan Kim
Publikováno v:
Materials Science Forum. :179-182
We report the development of over 100 μm/h growth rate process on 4-inch diameter wafers using chlorinated growth. The optimized growth process has shown extremely smooth epilayers completely free of surface step-bunching with very low surface defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5a364aa8f49580e89707ee6ae0b8ea
https://doi.org/10.4028/www.scientific.net/msf.778-780.179
https://doi.org/10.4028/www.scientific.net/msf.778-780.179
Autor:
Milan Yazdanfar, Jr Tai Chen, Erik Janzén, Bjorn Lundqvist, Rickard Liljedahl, Nguyen Tien Son, Olle Kordina, Joel W. Ager, Ivan Gueorguiev Ivanov, Pontus Stenberg, Jawad ul Hassan
Publikováno v:
Materials Science Forum. :471-474
The optical properties of isotope-pure28Si12C, natural SiC and enriched with13C isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Γ point and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04542033b095a522b3458b260c62a745
https://doi.org/10.4028/www.scientific.net/msf.778-780.471
https://doi.org/10.4028/www.scientific.net/msf.778-780.471
Autor:
Olle Kordina, Milan Yazdanfar, Ian Don Booker, Erik Janzén, Ivan Gueorguiev Ivanov, Pontus Stenberg, Henrik Pedersen
Publikováno v:
Journal of Crystal Growth. 380:55-60
The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200 nm thic ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::022ba9934f9ddd60b74cfc96b9f8360f
https://doi.org/10.1016/j.jcrysgro.2013.05.037
https://doi.org/10.1016/j.jcrysgro.2013.05.037