Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ponraj, J. S."'
Autor:
Dharman, R. K., Francis, B. M., Ponraj, J. S., Muthuvijayan, S., Manavalan, R. K., Harisingh, S., Balasubramanian, S., Dhanabalan, S. C.
Publikováno v:
J. Mater. Res. Technol.
Journal of Materials Research and Technology
Journal of Materials Research and Technology
The development of effective catalysts for catalytic reduction of the toxic 4-Nitrophenol (4-NP) into useful 4-Aminophenol (4-AP) has received wide interest. Herein, we report the synthesis of Titanium Metal–Organic Framework (Ti-MOF)/MoS2 hybrid n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::8129544c8376ca2cb75261ebea414593
https://hdl.handle.net/10995/111974
https://hdl.handle.net/10995/111974
Autor:
Xue, L., Peters, J. C. P. R., Dhanabalan, S. C., Madhaiyan, J., Manavalan, R. K., Ponraj, J. S.
Publikováno v:
Micro. Nano. Lett.
Micro and Nano Letters
Micro and Nano Letters
The present work reports the realisation of high-quality crystalline CdS/Mn3O4(CM) nanocomposites by a simple cost-effective chemical method in air atmosphere. The authors have performed theoretical calculations and experimental analysis in order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::2f519620bd8d1ba672874031121cb056
https://hdl.handle.net/10995/112202
https://hdl.handle.net/10995/112202
Autor:
Attolini, G., Ponraj, J. S., Frigeri, C., Buffagni, E., Ferrari, C., Musayeva, N., Jabbarov, R., Bosi, M.
Publikováno v:
Applied surface science 360 (2016): 157–163. doi:10.1016/j.apsusc.2015.10.153
info:cnr-pdr/source/autori:G. Attolini, J. S. Sophia, C. FRIGERI, E. Buffagni, C. Ferrari, N. Musayeva, R. Jabbarov, M. Bosi/titolo:MOVPE growth and characterization of heteroepitaxial germaniumon silicon using iBuGe as precursor/doi:10.1016%2Fj.apsusc.2015.10.153/rivista:Applied surface science/anno:2016/pagina_da:157/pagina_a:163/intervallo_pagine:157–163/volume:360
info:cnr-pdr/source/autori:Attolini, G.; Ponraj, J. S.; Frigeri, C.; Buffagni, E.; Ferrari, C.; Musayeva, N.; Musayeva, N.; Jabbarov, R.; Jabbarov, R.; Bosi, M./titolo:MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor/doi:10.1016%2Fj.apsusc.2015.10.153/rivista:Applied surface science/anno:2016/pagina_da:157/pagina_a:163/intervallo_pagine:157–163/volume:360
info:cnr-pdr/source/autori:G. Attolini, J. S. Sophia, C. FRIGERI, E. Buffagni, C. Ferrari, N. Musayeva, R. Jabbarov, M. Bosi/titolo:MOVPE growth and characterization of heteroepitaxial germaniumon silicon using iBuGe as precursor/doi:10.1016%2Fj.apsusc.2015.10.153/rivista:Applied surface science/anno:2016/pagina_da:157/pagina_a:163/intervallo_pagine:157–163/volume:360
info:cnr-pdr/source/autori:Attolini, G.; Ponraj, J. S.; Frigeri, C.; Buffagni, E.; Ferrari, C.; Musayeva, N.; Musayeva, N.; Jabbarov, R.; Jabbarov, R.; Bosi, M./titolo:MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor/doi:10.1016%2Fj.apsusc.2015.10.153/rivista:Applied surface science/anno:2016/pagina_da:157/pagina_a:163/intervallo_pagine:157–163/volume:360
Being an attractive and demanding candidate in the field of energy conversion, germanium has attained widespread applications. The present work is aimed at the study of metal organic vapour phase epitaxy of germanium thin films on (0 0 1) silicon at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::403310f91671b57194f0f44f7dae7311
Publikováno v:
Crystal Research and Technology 49 (2014): 575–580. doi:10.1002/crat.201300405
info:cnr-pdr/source/autori:Ponraj, J. S.; Attolini, G.; Bosi, M.; Dakshinamoorthy, A./titolo:Nanoindentation studies of gallium arsenide heteroepitaxial layers/doi:10.1002%2Fcrat.201300405/rivista:Crystal Research and Technology/anno:2014/pagina_da:575/pagina_a:580/intervallo_pagine:575–580/volume:49
info:cnr-pdr/source/autori:Ponraj, J. S.; Attolini, G.; Bosi, M.; Dakshinamoorthy, A./titolo:Nanoindentation studies of gallium arsenide heteroepitaxial layers/doi:10.1002%2Fcrat.201300405/rivista:Crystal Research and Technology/anno:2014/pagina_da:575/pagina_a:580/intervallo_pagine:575–580/volume:49
Gallium arsenide epilayers were deposited by horizontal home-made metal organic chemical vapor phase epitaxy, using trimethylgallium and arsine precursors with hydrogen as carrier gas at a pressure of 60 mbar. The samples were grown at a temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::4631d939ac64bb1a6c18ace1f4228a63
http://www.cnr.it/prodotto/i/291083
http://www.cnr.it/prodotto/i/291083
Autor:
Baldi, G., Bosi, M., Giusti, G., Attolini, G., Berzina, T., Collini, C., Lorenzelli, L., Mosca, R., Nozar, P., Ponraj, J. S., Toccoli, T., Verucchi, R., Iannotta, S.
Publikováno v:
AIP Conference Proceedings; 2015, Vol. 1648 Issue 1, p1-4, 4p, 3 Graphs
Akademický článek
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