Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Ponomarev Evgeniy"'
Autor:
Zhichkin Kirill, Nosov Vladimir, Zhichkina Lyudmila, Burlankov Petr, Ponomareva Liliya, Ponomarev Evgeniy
Publikováno v:
E3S Web of Conferences, Vol 164, p 06031 (2020)
The use of biodiesel in agricultural production is a prerequisite for reducing the cost price of manufactured goods. The purpose of the study is to identify how much equipment does the subject of the Russian Federation need for biodiesel production t
Externí odkaz:
https://doaj.org/article/0fe2a42c2f60488daa0aa26c81039440
Publikováno v:
Nat Rev Phys (2021)
Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are particularly
Externí odkaz:
http://arxiv.org/abs/2103.02230
Autor:
Reddy, Bojja Aditya, Ponomarev, Evgeniy, Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Barreteau, Céline, Giannini, Enrico, Morpurgo, Alberto F.
Publikováno v:
Nano Lett. 2019
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces
Externí odkaz:
http://arxiv.org/abs/2001.09777
Autor:
Ubrig, Nicolas, Ponomarev, Evgeniy, Zultak, Johanna, Domaretskiy, Daniil, Zólyomi, Viktor, Terry, Daniel, Howarth, James, Gutiérrez-Lezama, Ignacio, Zhukov, Alexander, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Taniguchi, Takashi, Watanabe, Kenji, Gorbachev, Roman V., Fal'ko, Vladimir I., Morpurgo, Alberto F.
Publikováno v:
Nature Materials (2020)
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stem
Externí odkaz:
http://arxiv.org/abs/1912.10345
Autor:
Ponomarev, Evgeniy, Sohier, Thibault, Gibertini, Marco, Berger, Helmuth, Marzari, Nicola, Ubrig, Nicolas, Morpurgo, Alberto F.
Publikováno v:
Phys. Rev. X 9, 031019 (2019)
Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically
Externí odkaz:
http://arxiv.org/abs/1901.08012
Autor:
Ponomarev, Evgeniy, Ubrig, Nicolas, Gutiérrez-Lezama, Ignacio, Berger, Helmuth, Morpurgo, Alberto F.
Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need t
Externí odkaz:
http://arxiv.org/abs/1807.08282
Autor:
Ponomarev, Evgeniy, Pásztor, Árpád, Waelchli, Adrien, Scarfato, Alessandro, Ubrig, Nicolas, Renner, Christoph, Morpurgo, Alberto F.
Publikováno v:
ACS Nano, 2018, 12 (3), pp 2669-2676
Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of
Externí odkaz:
http://arxiv.org/abs/1804.09218
Publikováno v:
Nano Lett., 2015, 15 (12), pp.8289-8294
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on
Externí odkaz:
http://arxiv.org/abs/1602.01663
Publikováno v:
In Transportation Research Procedia 2021 54:854-861
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