Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Pomarico Anna Angela"'
Autor:
Angelo Ciccazzo, Fabio Cenni, Gaetano Rascona, Pomarico Anna Angela, Roselli Giuditta, Franco Fummi, Michele Lora, Michelangelo Grosso, Sandro Dalle Feste, Ignazio Blanco, Fabio Grilli, Giuliana Gangemi, Salvatore Rinaudo, Mirko Guarnera, Roberto Carminati
Publikováno v:
Smart Systems Integration and Simulation ISBN: 9783319273907
This chapter presents two case studies showing how the proposed approach applies to smart system design and optimization. The former is the virtual prototyping platform built for a laser pico-projector actuator, where MEMS, analog and digital compone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f88fbce6a5138360b61953b847290ac2
https://doi.org/10.1007/978-3-319-27392-1_8
https://doi.org/10.1007/978-3-319-27392-1_8
Publikováno v:
Journal of Sensors, Vol 2010 (2010)
MEMS resonators are today widely investigated as a desirable alternative to quartz resonators in real-time clock applications, because of their low-cost, integration capability properties. Nevertheless, MEMS resonators performances are still not comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c064fa20d9d60b6082ddac19b0798a32
https://doi.org/10.1155/2010/362439
https://doi.org/10.1155/2010/362439
Autor:
Vittorianna Tasco, Massimo De Vittorio, Pomarico Anna Angela, Adriana Passaseo, Davide Altamura, Gianmichele Epifani, I. Ingrosso, Maria Teresa Todaro
Publikováno v:
Ferroelectrics
389 (2009).
info:cnr-pdr/source/autori:Altamura D, Pomarico A, Epifani G, Ingrosso I, Todaro MT, Tasco V, De Vittorio M, Passaseo A/titolo:Fabrication of BAW Resonators Based on Piezoelectric AlN and Reflector-on-Membrane Structure/doi:/rivista:Ferroelectrics (Print)/anno:2009/pagina_da:/pagina_a:/intervallo_pagine:/volume:389
389 (2009).
info:cnr-pdr/source/autori:Altamura D, Pomarico A, Epifani G, Ingrosso I, Todaro MT, Tasco V, De Vittorio M, Passaseo A/titolo:Fabrication of BAW Resonators Based on Piezoelectric AlN and Reflector-on-Membrane Structure/doi:/rivista:Ferroelectrics (Print)/anno:2009/pagina_da:/pagina_a:/intervallo_pagine:/volume:389
In this work we present a new approach to fabricate Bulk Acoustic Wave resonators based on reflector-on-membrane structure, on which piezoelectric film and electrodes are deposited as active part. The reflector provides enhancement of the fundamental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cffe063ad1742825a7f12bf7df8071bb
https://doi.org/10.1080/00150190902987640
https://doi.org/10.1080/00150190902987640
Autor:
Mauro Lomascolo, Pomarico Anna Angela, B. Potì, Adriana Passaseo, Maria Teresa Todaro, M. De Vittorio, M.C. Frassanito, R. Cingolani
Publikováno v:
physica status solidi (c). 1:589-593
In this work we have studied the role of excitons in two different low barrier metal–semiconductor–metal (MSM) GaN-based UV photodetectors at high temperature. The active material of the two MSM devices consists of bulk GaN grown by metal organic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9bac3f02bebe89e39012bbdf4cebc9a
https://doi.org/10.1002/pssc.200304046
https://doi.org/10.1002/pssc.200304046
Autor:
Mauro Lomascolo, R. Cingolani, B. Potì, Pomarico Anna Angela, M.C. Frassanito, Maria Teresa Todaro, Adriana Passaseo, M. De Vittorio
Publikováno v:
Sensors and actuators. A, Physical
113 (2004): 329–333. doi:10.1016/j.sna.2004.04.016
info:cnr-pdr/source/autori:De Vittorio M, Poti B, Todaro MT, Frassanito MC, Pomarico A, Passaseo A, Lomascolo M, Cingolani R/titolo:High temperature characterization of GaN-based photodetectors/doi:10.1016%2Fj.sna.2004.04.016/rivista:Sensors and actuators. A, Physical (Print)/anno:2004/pagina_da:329/pagina_a:333/intervallo_pagine:329–333/volume:113
113 (2004): 329–333. doi:10.1016/j.sna.2004.04.016
info:cnr-pdr/source/autori:De Vittorio M, Poti B, Todaro MT, Frassanito MC, Pomarico A, Passaseo A, Lomascolo M, Cingolani R/titolo:High temperature characterization of GaN-based photodetectors/doi:10.1016%2Fj.sna.2004.04.016/rivista:Sensors and actuators. A, Physical (Print)/anno:2004/pagina_da:329/pagina_a:333/intervallo_pagine:329–333/volume:113
In this work we report on the high temperature characterization of two different interdigitated metal–semiconductor–metal (MSM) GaN-based photodetectors. The active material of the two MSM devices consists of bulk GaN grown by metal organic chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93908696f5e451dfede6270b4c9b2d2a
https://hdl.handle.net/11587/300458
https://hdl.handle.net/11587/300458
Autor:
M.C. Frassanito, Mauro Lomascolo, Adriana Passaseo, M. De Vittorio, B. Potì, Maria Teresa Todaro, Pomarico Anna Angela, R. Cingolani
Publikováno v:
Electronics Letters 39 (2003): 1747–1749.
info:cnr-pdr/source/autori:Poti B., Todaro M. T., Frassanito M. C., Pomarico A., Passaseo A., Lomascolo M., Cingolani R., De Vittorio M./titolo:High responsivity GaN-based UV detectors/doi:/rivista:Electronics Letters/anno:2003/pagina_da:1747/pagina_a:1749/intervallo_pagine:1747–1749/volume:39
info:cnr-pdr/source/autori:Poti B., Todaro M. T., Frassanito M. C., Pomarico A., Passaseo A., Lomascolo M., Cingolani R., De Vittorio M./titolo:High responsivity GaN-based UV detectors/doi:/rivista:Electronics Letters/anno:2003/pagina_da:1747/pagina_a:1749/intervallo_pagine:1747–1749/volume:39
The high temperature. characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7 x 10(6) A/W at room temperature and of 1.4 x 10(6) A/W at 450 K was achieved at the waveleng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d13fc39e93f7ef2e9571af5c053b4b0d
https://hdl.handle.net/11587/107224
https://hdl.handle.net/11587/107224