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Autor:
Linss, V., Dietsch, T., Baumann, J., Graupner, U., Hoß, J., Linke, J., Lossen, J., Polzin, J.I., Mack, S., Nagel, H., Bivour, M., Schneiderlöchner, E.
8th World Conference on Photovoltaic Energy Conversion; 202-207
In this work we report on the development of an industrially relevant in-situ doped sputtering process for depositing 100-150 nm thick aSi(n) layers to passivate the rear contact of
In this work we report on the development of an industrially relevant in-situ doped sputtering process for depositing 100-150 nm thick aSi(n) layers to passivate the rear contact of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10262f75be7bd35cdc949f1549033db
