Zobrazeno 1 - 10
of 6 122
pro vyhledávání: '"Polysilicon"'
Publikováno v:
Pribory i Metody Izmerenij, Vol 15, Iss 2, Pp 104-109 (2024)
Energy dispersive X-ray microanalysis is one of the main methods for determining the elemental composition of matter. Possessing high locality and a relatively shallow penetration depth of the electron beam (
Externí odkaz:
https://doaj.org/article/2fe456380f61484ea4e55ae54866ceab
Publikováno v:
Sensor Review, 2024, Vol. 44, Issue 4, pp. 462-476.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/SR-02-2024-0115
Akademický článek
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Autor:
Jae-Sung Lee
Publikováno v:
IEEE Access, Vol 12, Pp 150540-150545 (2024)
In a polysilicon-based photodetector structure, a polysilicon film is important because it acts as both a light-absorption layer and a conductive path. The grain boundary inside polysilicon acts as an energy barrier to the movement of carriers, and r
Externí odkaz:
https://doaj.org/article/eec20f371ec84bf9bb895e8a7ae15f9c
Publikováno v:
Mathematics, Vol 12, Iss 23, p 3690 (2024)
Given the non-stationarity, nonlinearity, and high complexity of polysilicon prices in the photovoltaic (PV) industry chain, this paper introduces upstream and downstream material prices of the PV industry chain and macroeconomic indicators as influe
Externí odkaz:
https://doaj.org/article/76c04e80e4fa4a298d7b589b55a9b34f
Publikováno v:
Journal of Advanced Dielectrics, Vol 14, Iss 03 (2024)
Large-size electronic-grade polycrystalline silicon is an important material in the semiconductor industry with broad application prospects. However, electronic-grade polycrystalline silicon has extremely high requirements for production technology a
Externí odkaz:
https://doaj.org/article/05eb0917fe8744f88d229f735482e0e7
Publikováno v:
Journal of Advanced Dielectrics, Vol 14, Iss 03 (2024)
This paper focuses on the problems encountered in the production process of electronic-grade polycrystalline silicon. It points out that the characterization of electronic-grade polycrystalline silicon is mainly concentrated at the macroscopic scale,
Externí odkaz:
https://doaj.org/article/ececfcce816d49868e69a6e299d63580
Autor:
Deepak K. Sharma, Vivek Kumar
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100096- (2024)
This study investigates the influence of heavy ion irradiation on thin film transistors (TFTs) based on an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. Through the use of Technology Computer-Aided Design (TCAD) simulations,
Externí odkaz:
https://doaj.org/article/a275d9ad6b8f4aa18900548554a5c364
Publikováno v:
Case Studies in Thermal Engineering, Vol 51, Iss , Pp 103623- (2023)
The effects of operating and geometric parameters on convective heat transfer (CHT) in Siemens reactor with a laboratory-scale are investigated. A dimensionless analysis of the CHT is performed considering the flow characteristics, rod diameter (d),
Externí odkaz:
https://doaj.org/article/dbf7eff8f8b244668640725af8188441