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pro vyhledávání: '"Polspoel, Wouter"'
Autor:
Polspoel, Wouter
This work describes the analysis of local morphologic and electric properties of thin dielectrics that are used in semiconductor devices, such as transistors and capacitors. The key analysis technique applied is Conductive Atomic Force Microscopy (C-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1131::3c0a1befb9240749800f6b03e23a747a
https://lirias.kuleuven.be/handle/123456789/333607
https://lirias.kuleuven.be/handle/123456789/333607
The dielectric degradation of ultrathin 2 nm silicon dioxide SiO2 layers has been investigated by constant and ramped voltage stresses with the conductive atomic force microscopy CAFM. CAFM imaging shows clearly the lateral degradation propagation an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::2829fb1617f84f90bf7e11d75f126879
https://zenodo.org/record/889788
https://zenodo.org/record/889788
Akademický článek
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Autor:
Polspoel, Wouter, Vandervorst, Wilfried, Aguilera, Lidia, Porti, Marc, Nafria, Montserrat, Aymerich, Xavier
Publikováno v:
MRS Online Proceedings Library; 2008, Vol. 1074 Issue 1, p1-7, 7p
Publikováno v:
MRS Online Proceedings Library; 2008, Vol. 1070 Issue 1, p1-7, 7p
Publikováno v:
Applied Physics Letters; 5/29/2006, Vol. 88 Issue 22, p222104, 3p, 3 Black and White Photographs, 1 Graph
Autor:
Mody, Jay, Duffy, Ray, Eyben, Pierre, Goossens, Jozefien, Moussa, Alain, Polspoel, Wouter, Berghmans, Bart, van Dal, M. J. H., Pawlak, B. J., Kaiser, M., Weemaes, R. G. R., Vandervorst, Wilfried
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2010, Vol. 28 Issue 3, p648-648, 1p