Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Polla Rouf"'
Publikováno v:
Green Chemistry Letters and Reviews, Vol 15, Iss 3, Pp 658-670 (2022)
Quaternary metal oxynitride-based photoanodes with a large light transmittance are promising for high solar-to-hydrogen (STH) conversion efficiency in photoelectrochemical (PEC) tandem cells. Transparent substrates to support PEC water-splitting were
Externí odkaz:
https://doaj.org/article/e11185f115cc4420be5926cb2de0c7b2
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021)
Abstract Highly efficient photoelectrochemical (PEC) water oxidation under solar visible light is crucial for water splitting to produce hydrogen as a source of sustainable energy. Particularly, silver-based nanomaterials are important for PEC perfor
Externí odkaz:
https://doaj.org/article/0e7d21badc1b4fc7b31e341bb113fc3c
Publikováno v:
Dalton Transactions. 51:4712-4719
Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(iii) triazenide prec
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(12)
Indium oxide (In
Publikováno v:
The Journal of Physical Chemistry C. 124:14176-14181
Aluminum nitride (AlN) is a semiconductor with a wide range of applications from light-emitting diodes to high-frequency transistors. Electronic grade AlN is routinely deposited at 1000 degrees C by chemical vapor deposition (CVD) using trimethylalum
Autor:
Chih-Wei Hsu, Ivan Martinovic, Roger Magnusson, Babak Bakhit, Justinas Palisaitis, Per. O. Å. Persson, Polla Rouf, Henrik Pedersen
InxGa1-x N is a strategically important material for electronic devices given its tunable bandgap, modulated by the In/Ga ratio. However, current applications are hindered by defects caused by strain relaxation and phase separation in the material. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69a8f2e48538a0bdd35e988251659984
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-190624
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-190624
Quaternary metal oxynitride-based photoanodes with a large light transmittance are promising for high solar-to-hydrogen (STH) conversion efficiency in photoelectrochemical (PEC) tandem cells. Transparent substrates to support PEC water-splitting were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd7596eef9c38a18034607658a1bbf2
https://doi.org/10.33774/chemrxiv-2021-5q5g5
https://doi.org/10.33774/chemrxiv-2021-5q5g5
Autor:
Polla Rouf
Publikováno v:
Linköping Studies in Science and Technology. Dissertations ISBN: 9789179296315
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f49928a5d8b0983f4d182b4162f02c7
https://doi.org/10.3384/diss.diva-178131
https://doi.org/10.3384/diss.diva-178131
We present an ALD approach to metastable In1-xGaxN with 0.1 < x < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap value of 1.94 eV was achieved on a Si(10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3919d5282b15b156a266b9c1d79cd4cb
https://doi.org/10.26434/chemrxiv.14671575.v1
https://doi.org/10.26434/chemrxiv.14671575.v1
Autor:
Nathan J. O’Brien, Henrik Pedersen, Polla Rouf, Ivan Gueorguiev Ivanov, Lars Ojamäe, Karl Rönnby, Rouzbeh Samii
Publikováno v:
The Journal of Physical Chemistry C. 123:25691-25700
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its high electron mobility. The problematic deposition of InN films currently prevents full exploration of InN-based electronics. We present studies of atomi