Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pokhui Blanco"'
Autor:
Liyan Miao, Pokhui Blanco, Xumou Xu, Chris Ngai, Raymond Hung, Ping Xu, Hao Chen, Yongmei Chen, Yijian Chen
Publikováno v:
SPIE Proceedings.
Novel patterning approaches are explored to enable either more cost-effective manufacturing solutions or a potential paradigm shift in patterning technology. First, a simplified self-aligned quadruple patterning (SAQP) process is developed to extend
Publikováno v:
SPIE Proceedings.
In this paper, a recessive self-aligned double patterning (RSADP) process enabled by gap-fill technology is proposed and developed for BEOL applications. FEOL application is also possible by adding gap-fill/CMP steps to reverse the tone of contact/tr
Autor:
Yongmei Chen, Christopher S. Ngai, Pokhui Blanco, Bencherki Mebarki, Jen Shu, James Yu, Liyan Miao, Mehul Naik, James Makeeff, Christopher Dennis Bencher
Publikováno v:
SPIE Proceedings.
State of the art production single print lithography for contact is limited to ~43-44nm half-pitch given the parameters in the classic photolithography resolution formula for contacts in 193 immersion tool (k1 ≥ 0.3, NA = 1.35, and λ = 193nm). Sin
Autor:
Man-Ping Cai, Shiany Oemardani, Pokhui Blanco, Yongmei Chen, Shiyu Sun, Xumou Xu, Osbert Chan, Chris Ngai, Raymond Hung, Liyan Miao, Huixiong Dai, Jaklyn Jin, James Yu, Chorng-Ping Chang, Ping Xu, Christopher Dennis Bencher
Publikováno v:
SPIE Proceedings.
Self-Aligned Double patterning (SADP) technology has been identified as the main stream patterning technique for NAND FLASH manufacturers for 3xnm and beyond. This paper demonstrates the successful fabrication of 32nm halfpitch electrical testable NA
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Chemical shrink and SAFIER are two resist shrinking processes that have been proved effective to reduce the trench and contact hole CD with enhanced resolution and process windows. Patterning sub-20 nm trenches, however, is found to be challenging us