Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Poffo, C. M."'
A nanostructured trigonal SnSe2 was produced by mechanical alloying, and the effect of high-pressures up to 25.8 GPa on it was investigated. The literature reports refined structural data for SnS2 for pressures up to 20 GPa. These data were used as i
Externí odkaz:
http://arxiv.org/abs/1803.05430
An approach combining the Rietveld method and pairs distribution function analysis to study crystalline materials under high pressure or temperature was early proposed by us, and in this study, it was applied to investigate de effect of high pressure
Externí odkaz:
http://arxiv.org/abs/1803.02479
An approach combining the Rietveld method and pairs distribution function analysis was developed and can help to understand the effect of temperature and/or high-pressure on crystalline materials. It was applied to orthorhombic Ta2O5 compound, and th
Externí odkaz:
http://arxiv.org/abs/1802.04648
Publikováno v:
Journal of Applied Physics; 2018, Vol. 124 Issue 21, pN.PAG-N.PAG, 11p, 2 Charts, 9 Graphs
Autor:
Borges, Z. V.1, Poffo, C. M.2 claudio.poffo@ufsc.br, de Lima, J. C.3, Souza, S. M.4, Trichês, D. M.4, de Biasi, R. S.5
Publikováno v:
Journal of Applied Physics. 2018, Vol. 124 Issue 21, pN.PAG-N.PAG. 11p. 2 Charts, 9 Graphs.
Autor:
Poffo, C. M.1 claudio.poffo@ufsc.br, de Lima, J. C.2, Souza, S. M.3, Trichês, D. M.3, Borges, Z. V.2, de Biasi, R. S.4
Publikováno v:
Journal of Materials Science. Oct2018, Vol. 53 Issue 19, p13451-13463. 13p. 1 Chart, 8 Graphs.
Autor:
Prates, P. B., Maliska, A. M., Ferreira, A. S., Poffo, C. M., Borges, Z. V., de Lima, J. C., de Biasi, R. S.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 15, p154903-1-154903-9, 9p, 2 Charts, 11 Graphs
Akademický článek
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Autor:
Siqueira, M. C., Maia, R. N. A., Araujo, R. M. T., Machado, K. D., Stolf, S. F., De Lima, J. C., Poffo, C. M.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 8, p083514-1-083514-6, 6p, 1 Diagram, 2 Charts, 8 Graphs
Publikováno v:
Journal of Applied Physics; Oct2011, Vol. 110 Issue 8, p083528, 9p