Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Poeschl, Andreas"'
Autor:
Pöschl, Andreas
In this PhD thesis, quantum devices based on molecular-beam epitaxy grown InAs semiconductor with an in-situ grown epitaxial Al film were investigated. Novel device geometries were realized that allow for the study of bound states that emerge at low
Externí odkaz:
http://arxiv.org/abs/2212.12068
Autor:
Danilenko, Alisa, Pöschl, Andreas, Sabonis, Deividas, Vlachodimitropoulos, Vasileios, Thomas, Candice, Manfra, Michael J., Marcus, Charles M.
Publikováno v:
Phys. Rev. B 108, 054514 (2023)
We realize a device, based on InAs two-dimensional electron gas proximitized by superconducting Al, which allows a single quantum dot level to be used as a spectrometer of the density of states in a nanowire. Applying a magnetic field parallel to the
Externí odkaz:
http://arxiv.org/abs/2212.10175
Autor:
Pöschl, Andreas, Danilenko, Alisa, Sabonis, Deividas, Kristjuhan, Kaur, Lindemann, Tyler, Thomas, Candice, Manfra, Michael J., Marcus, Charles M.
Publikováno v:
Phys. Rev. B 106, L241301 (2022)
The charge character of Andreev bound states (ABSs) in a three-terminal semiconductor-superconductor hybrid nanowire was measured using local and nonlocal tunneling spectroscopy. The device is fabricated using an epitaxial InAs/Al two-dimensional het
Externí odkaz:
http://arxiv.org/abs/2204.02430
Autor:
Pöschl, Andreas, Danilenko, Alisa, Sabonis, Deividas, Kristjuhan, Kaur, Lindemann, Tyler, Thomas, Candice, Manfra, Michael J., Marcus, Charles M.
We investigate local and nonlocal signatures of hybridization between a quantum dot state and an extended Andreev bound state (ABS) in a gate-defined InAs nanowire with multiple side probes. When a quantum dot in one of the side probes was hybridized
Externí odkaz:
http://arxiv.org/abs/2201.03687
Autor:
Martinez, Esteban A., Pöschl, Andreas, Hansen, Esben Bork, van de Poll, May An Y., Vaitiekėnas, Saulius, Higginbotham, Andrew P., Casparis, Lucas
In this article we study measurement circuit effects in three-terminal electrical transport measurements arising from finite line impedances. We provide exact expressions relating the measured voltages and differential conductances to their values at
Externí odkaz:
http://arxiv.org/abs/2104.02671
Autor:
Zhang, Chi, Pokorny, Fabian, Li, Weibin, Higgins, Gerard, Pöschl, Andreas, Lesanovsky, Igor, Hennrich, Markus
Publikováno v:
Nature 580, 345-349 (2020)
Generating quantum entanglement in large systems on time scales much shorter than the coherence time is key to powerful quantum simulation and computation. Trapped ions are among the most accurately controlled and best isolated quantum systems with l
Externí odkaz:
http://arxiv.org/abs/1908.11284
Autor:
Giménez, Sixto, Rogach, Andrey L., Lutich, Andrey A., Gross, Dieter, Poeschl, Andreas, Susha, Andrei S., Mora-Seró, Ivan, Lana-Villarreal, Teresa, Bisquert, Juan
Publikováno v:
Journal of Applied Physics; Jul2011, Vol. 110 Issue 1, p014314, 7p, 1 Diagram, 1 Chart, 4 Graphs
Akademický článek
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