Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Pockelsův jev"'
Autor:
Fridrišek, Tomáš
The main aim of this bachelor thesis was to investigate whether it is possible to use a new method based on the electro-optical Pockels effect, to study the internal electric field in the coplanar grid detector. The Pocklels coefficient for CdZnTe wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2186::f7087ffb4ffbda3965823efecf9c01bc
http://www.nusl.cz/ntk/nusl-434039
http://www.nusl.cz/ntk/nusl-434039
Autor:
Rejhon, Martin
Title: Point defects in materials for detection of X-ray and gamma radiation Author: Martin Rejhon Department: Institute of Physics of Charles University Supervisor: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles Uni- versity Abstract:
Externí odkaz:
http://www.nusl.cz/ntk/nusl-409627
Autor:
Rejhon, Martin
Title: Point defects in materials for detection of X-ray and gamma radiation Author: Martin Rejhon Department: Institute of Physics of Charles University Supervisor: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles Uni- versity Abstract:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2950b4ab9853c7b35e32d7085580a032
http://www.nusl.cz/ntk/nusl-409627
http://www.nusl.cz/ntk/nusl-409627
Autor:
Rejhon, Martin
This thesis is focused on a study of CdTe and CdZnTe semiconductor detectors working under high flux of radiation. We studied experimentally an influence of high flux of X-rays and optical radiation on polarization of the detector. The polarization p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5fa45a8cbb89e6cb472db77f34a6d8fa
http://www.nusl.cz/ntk/nusl-295774
http://www.nusl.cz/ntk/nusl-295774
Autor:
Rejhon, Martin
This thesis is focused on a study of CdTe and CdZnTe semiconductor detectors working under high flux of radiation. We studied experimentally an influence of high flux of X-rays and optical radiation on polarization of the detector. The polarization p
Externí odkaz:
http://www.nusl.cz/ntk/nusl-331712
Autor:
Dědič, Václav
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detectors. The accumulation of a space charge at deep energy levels due to a band bending at contacts with Schottky barriers and due to trapped photogenera
Externí odkaz:
http://www.nusl.cz/ntk/nusl-342278
Autor:
Rejhon, Martin
In this work, we have added a temperature controller to an apparatus for measuring Pockels effect, which comprises of an integrated circuit and a Peltier element. Then the course of the electric field was measured in the sample of high resistance CdT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3e4b91e4304f139ef81b11601554c6b8
http://www.nusl.cz/ntk/nusl-329573
http://www.nusl.cz/ntk/nusl-329573