Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Po-hao Tsai"'
Autor:
Po-hao Tsai, 蔡柏豪
100
The study aims to investigate the effects of the VOD-blended remedial mode on English reading performance of vocational high school students. First, the English reading performance of the VOD-blended remedial group (VG) and the traditional c
The study aims to investigate the effects of the VOD-blended remedial mode on English reading performance of vocational high school students. First, the English reading performance of the VOD-blended remedial group (VG) and the traditional c
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/17480514331695921357
Publikováno v:
Processes; Volume 10; Issue 8; Pages: 1522
This study implements a multifunctional charger based on a dual-switching, bidirectional flyback converter (DSBFC). The proposed charger adopts seven charging methods, including the incremental-current charging, constant-voltage (CV) charging, consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba7e5c966b08898150c00577f54ac0c0
https://doi.org/10.3390/pr10081522
https://doi.org/10.3390/pr10081522
Publikováno v:
Electronic Materials Letters. 10:551-556
In this study, we investigated the thermal stability, wettability, adhesion and reliability of (Ti,Zr)N x films used as the diffusion barrier between Cu and Si. (Ti,Zr)N x films were prepared by DC reactive magnetron sputtering from a Ti-5 at. % Zr a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a8530539609fc9515d2da7e9a337b6
https://doi.org/10.1007/s13391-013-3145-8
https://doi.org/10.1007/s13391-013-3145-8
Publikováno v:
Electronic Materials Letters. 9:593-597
NbN films were prepared by radio frequency reactive magnetron sputtering and then employed as diffusion barriers between Cu and Si. The microstructure of the NbN films was an assembly of very small columnar crystallites with a cubic structure. To inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::822a2ae6be54e60dfeb3e116b30601e0
https://doi.org/10.1007/s13391-012-2173-0
https://doi.org/10.1007/s13391-012-2173-0
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N152-N158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e20a57f0306a4543d220d0f7e18d5279
https://doi.org/10.1149/2.025307jss
https://doi.org/10.1149/2.025307jss
Publikováno v:
Journal of Alloys and Compounds. 517:111-117
The interfacial reactions of Sn, Sn–3.0 wt% Ag–0.5 wt% Cu (SAC), Sn–0.7 wt% Cu (SC), Sn–58 wt% Bi (SB) and Sn–9 wt% Zn (SZ) lead-free solders with an Au/Pd/Ni/brass multilayer substrate were systematically investigated in this study. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11363200eff451db53175c8fffbe28f
https://doi.org/10.1016/j.jallcom.2011.12.046
https://doi.org/10.1016/j.jallcom.2011.12.046
Publikováno v:
Journal of Micromechanics and Microengineering. 15:136-142
Thick and smooth amorphous Si film of 2 µm without hillocks has been obtained at low temperature of 300 °C by plasma-enhanced chemical vapor deposition (PECVD) technology. In comparison with conventional sputtering deposition, PECVD-deposited thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::203c192e0b5fa176b607228e72e7e73d
https://doi.org/10.1088/0960-1317/15/1/021
https://doi.org/10.1088/0960-1317/15/1/021
Autor:
Chi Lin Chen, C. W. Chen, Yu-Cheng Chen, Ting-Chang Chang, Jia Xing Lin, Po Hao Tsai, Hau-Yan Lu, Po-Tsun Liu, Hung Tse Chen, H. H. Wu, Jason C. Chang
Publikováno v:
SID Symposium Digest of Technical Papers. 36:1152
In this paper, flash memories using low temperature poly-Si thin- film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29748f9897cb06ca2ca761c2a98bb1e8
https://doi.org/10.1889/1.2036205
https://doi.org/10.1889/1.2036205