Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Po-Yung Liao"'
Autor:
Chung-I. Yang, Ting-Chang Chang, Po-Yung Liao, Li-Hui Chen, Bo-Wei Chen, Wu-Ching Chou, Guan-Fu Chen, Sung-Chun Lin, Cheng-Yen Yeh, Cheng-Ming Tsai, Ming-Chang Yu, Shengdong Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 685-690 (2018)
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 t
Externí odkaz:
https://doaj.org/article/d2f113e1ff8d46f38ccfc5144977f326
Autor:
Po-Yung Liao, 廖柏詠
106
In order to meet the requirements of novel display technologies such as high-resolution large-screen LCD and AMOLED. Oxide semiconductor thin film transistors (TFTs) have attracted much attention recently since they possess many advantageous
In order to meet the requirements of novel display technologies such as high-resolution large-screen LCD and AMOLED. Oxide semiconductor thin film transistors (TFTs) have attracted much attention recently since they possess many advantageous
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/hf2p3q
Autor:
Hong-Chih Chen, Wan-Ching Su, Yu-Zhe Zheng, Po-Yung Liao, Yang-Hao Hung, I-Nien Lu, Yu-Shan Lin, Tsung-Ming Tsai, Po-Hsun Chen, Yu-Fa Tu, Ting-Chang Chang, Fong-Min Ciou
Publikováno v:
IEEE Electron Device Letters. 41:745-748
In this study, the influence of hot carriers and illumination stress on InGaZnO thin-film-transistors (TFTs) with asymmetrical geometry was investigated by measuring the drain current-gate voltage ( $\text{I}_{\text {D}}$ - $\text{V}_{\text {G}}$ ) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71f27e605462bd1ac8da8a30db0b66ba
https://doi.org/10.1109/led.2020.2984827
https://doi.org/10.1109/led.2020.2984827
Autor:
Shengdong Zhang, Ting-Chang Chang, Hong-Chih Chen, Guan-Fu Chen, Sung-Chun Lin, Chia-Sen Chang, Shin-Ping Huang, Wei-Chih Lai, Jian-Jie Chen, Cheng-Ming Tsai, Ming-Chang Yu, Ann-Kuo Chu, Chuan-Wei Kuo, Cheng-Yen Yeh, Hua-Mao Chen, Po-Yung Liao
Publikováno v:
IEEE Transactions on Electron Devices. 66:2614-2619
This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current–gate voltage ( ${I}_{\text {D}}$ – ${V}_{\text {
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbf7347ab3a111e18a6aedf7a506171
https://doi.org/10.1109/ted.2019.2908859
https://doi.org/10.1109/ted.2019.2908859
Autor:
Shengdong Zhang, Hsi-Wen Liu, Chung-I Yang, Ting-Chang Chang, Guan-Fu Chen, Ying-Hsin Lu, Shin-Ping Huang, Yu-Xuan Wang, Wu-Ching Chou, Chien-Yu Lin, Yu-Zhe Zheng, Bo-Wei Chen, Yu-Shan Lin, Po-Yung Liao
Publikováno v:
IEEE Transactions on Electron Devices. 65:533-536
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a30a67daa978dc5bc193c296fd246cd7
https://doi.org/10.1109/ted.2017.2786144
https://doi.org/10.1109/ted.2017.2786144
Autor:
Li-Hui Chen, Cheng-Ming Tsai, Guan-Fu Chen, Po-Yung Liao, Sung-Chun Lin, Chung-I Yang, Shengdong Zhang, Ming-Chang Yu, Cheng-Yen Yeh, Ting-Chang Chang, Bo-Wei Chen, Wu-Ching Chou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 685-690 (2018)
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The $V_{\mathrm{ th}}$ is found to shift negatively when increasing the $I _{D}$ – $V _{G}$ meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5a393d58d0d1303bc36610a93aa08bb
https://ieeexplore.ieee.org/document/8360776/
https://ieeexplore.ieee.org/document/8360776/
Publikováno v:
SID Symposium Digest of Technical Papers. 50:214-216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83525be7779dcc3b3e24ab28ace0647c
https://doi.org/10.1002/sdtp.12893
https://doi.org/10.1002/sdtp.12893
Autor:
Cheng Ming Tsai, Ting-Chang Chang, Wu-Ching Chou, Bo Wei Chen, Sung Chun Lin, Chia Sen Chang, Chung I. Yang, Cheng Yen Yeh, Po Yung Liao, Ming Chang Yu
Publikováno v:
Thin Solid Films. 644:45-51
This work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3adb81679dadd5b27fdcb096f9119f
https://doi.org/10.1016/j.tsf.2017.08.053
https://doi.org/10.1016/j.tsf.2017.08.053
Autor:
Yu-Ho Lin, Li-Hui Chen, Hsiao-Cheng Chiang, Hsueh-Hsing Lu, Yu-Ju Hung, Kuan-Chang Chang, Wan-Ching Su, Ting-Chang Chang, Jianwen Yang, Hung Wei Li, Ann-Kuo Chu, Hsin-Lu Chen, Bo-Wei Chen, Chih-Hung Tsai, Shin-Ping Huang, Tai-Fa Young, Po-Yung Liao, Yu-Ching Tsao, Yu-Zhe Zheng
Publikováno v:
IEEE Transactions on Electron Devices. 64:3167-3173
This paper systematically studies high-current-induced effects, hot-carrier effects, and self-heating effects in flexible low-temperature polycrystalline-silicon thin-film transistors fabricated on polyimide. By utilizing ${I}$ – ${V}$ and various-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7052395bfd02998c851ee7d6fb663531
https://doi.org/10.1109/ted.2017.2715500
https://doi.org/10.1109/ted.2017.2715500
Autor:
Ting-Chang Chang, Jianwen Yang, Hui-Chun Huang, Bo-Wei Chen, Wan-Ching Su, Hsiao-Cheng Chiang, Qun Zhang, Po-Yung Liao
Publikováno v:
IEEE Electron Device Letters. 38:592-595
The hump phenomenon along with a negative shift of threshold voltage emerging in the transfer characteristics of amorphous InGaZnO thin-film transistors under negative bias stress was investigated. Higher measurement temperature and larger bias volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd7491f85c8d31c3031eeb7ec7e7e37
https://doi.org/10.1109/led.2017.2686898
https://doi.org/10.1109/led.2017.2686898