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pro vyhledávání: '"Po-Yuan Dang"'
Autor:
Po-Yuan Dang, 鄧博元
98
In this thesis, we study the optical characteristics and polarization anisotropy of the tensile strained polar c-plane InGaN/AlInN quantum wells with zero internal polarization field. The influence of different alloy compositions of the quant
In this thesis, we study the optical characteristics and polarization anisotropy of the tensile strained polar c-plane InGaN/AlInN quantum wells with zero internal polarization field. The influence of different alloy compositions of the quant
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/26213754008448618261
Autor:
Ingrid Koslow, Feng Wu, Steven P. DenBaars, Shuji Nakamura, Alexey E. Romanov, James S. Speck, Matthew T. Hardy, Erin C. Young, Yuh-Renn Wu, Po-Yuan Dang, Po Shan Hsu
Publikováno v:
Applied Physics Letters. 101:121106
Long wavelength (525–575 nm) (112¯2) light emitting diodes were grown pseudomorphically on stress relaxed InGaN buffer layers. Basal plane dislocation glide led to the formation of misfit dislocations confined to the bottom of the InGaN buffer lay
Autor:
Po-Yuan Dang, Yuh-Renn Wu
Publikováno v:
Journal of Applied Physics. 108:083108
In this paper, we discuss the optical characteristics and polarization anisotropy of a tensile strained polar c-plane InGaN/AlInN quantum well. We found that if the quantum well is under the tensile strain, the Z-like state will be lifted up so that