Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Po-Tsung Tu"'
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1582 (2023)
A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and lo
Externí odkaz:
https://doaj.org/article/3c0c8ce4e33b4ee1ac907ea15cc57ba1
Autor:
Indraneel Sanyal, En-Shuo Lin, Yu-Chen Wan, Kun-Ming Chen, Po-Tsung Tu, Po-Chun Yeh, Jen-Inn Chyi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 130-136 (2021)
This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility transistors grown on 150 mm p-type low resistivity (resistivity~ 20–100 $\Omega $ -cm) silicon substrate with state-of-the-art Johnson’s figure-of-merit (JFOM). Curren
Externí odkaz:
https://doaj.org/article/b7a90ca0f4994778948b8f1e48b92adf
Autor:
Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Publikováno v:
Micromachines, Vol 12, Iss 10, p 1159 (2021)
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently
Externí odkaz:
https://doaj.org/article/6224875880844fb29c583e51058b6860
Autor:
An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Publikováno v:
Micromachines, Vol 12, Iss 7, p 737 (2021)
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized prod
Externí odkaz:
https://doaj.org/article/bef6ba89d4b74debbedb6beaf5adf724
Autor:
Po-tsung Tu, 凃伯璁
102
In this work the influence of GaN cap layer on the performance of AlInN/GaN HEMTs (high electron mobility transistors) is studied to improve issues such as high leakage current and low breakdown voltage often found on conventional AlInN HEMT
In this work the influence of GaN cap layer on the performance of AlInN/GaN HEMTs (high electron mobility transistors) is studied to improve issues such as high leakage current and low breakdown voltage often found on conventional AlInN HEMT
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14696208096007550330
Autor:
An-Chen Liu, Yu-Wen Huang, Chao-Hsu Lin, Yi-Jun Dong, Yung-Yu Lai, Chao-Cheng Ting, Po-Tsung Tu, Po-Chun Yeh, Hsin-Chu Chen, Hao-Chung Kuo
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e4a83ea470852e9d65d68fd409e9d2
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134028
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134028
Autor:
Jen-Inn Chyi, Po-Chun Yeh, Kun-Ming Chen, Indraneel Sanyal, Yu-Chen Wan, Po-Tsung Tu, En-Shuo Lin
Publikováno v:
IEEE Journal of the Electron Devices Society. 9:130-136
This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility transistors grown on 150 mm p-type low resistivity (resistivity~ 20–100 $\Omega $ -cm) silicon substrate with state-of-the-art Johnson’s figure-of-merit (JFOM). Curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5beac18046d09be34fab7cfe9e48f484
https://doi.org/10.1109/jeds.2020.3043279
https://doi.org/10.1109/jeds.2020.3043279
Autor:
Hui-Yu Chen, Po-Tsung Tu, Po-Chun Yeh, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Chih-I Wu, Indraneel Sanyal, Jen-Inn Chyi
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3903e90a89f208f8ed16d6b008a86fc0
https://doi.org/10.1109/vlsi-tsa54299.2022.9771040
https://doi.org/10.1109/vlsi-tsa54299.2022.9771040
Autor:
Hsin-Yun Yang, Shyh-Shyuan Sheu, Fu Yi-Keng, Li-Heng Lee, Yuh-Renn Wu, Po-Chun Yeh, Po-Tsung Tu, Pei-Jer Tzeng, Hsueh-Hsing Liu, Chien-Hua Hsu, Wei-Chung Lo, Chih-I Wu
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with L g = 250nm reaching f t /f max = 50/44 GHz. By semi-automatic RF measurements mapping in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a45993b6e7297dcb166fb6641299799
https://doi.org/10.1109/vlsi-tsa51926.2021.9440075
https://doi.org/10.1109/vlsi-tsa51926.2021.9440075
Autor:
Jen-Inn Chyi, Po-Tsung Tu, Chih-I Wu, Po-Chun Yeh, Indraneel Sanyal, Li-Heng Lee, Heng-Yuan Lee
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit I ds,sat = 908 mA/mm and g m = 451 mS/mm. In small-signal operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b108ca06f695211e40394685af0148e
https://doi.org/10.1109/vlsi-tsa48913.2020.9203728
https://doi.org/10.1109/vlsi-tsa48913.2020.9203728