Zobrazeno 1 - 10
of 403
pro vyhledávání: '"Po-Tsun Liu"'
Publikováno v:
Advanced Science, Vol 10, Iss 9, Pp n/a-n/a (2023)
Abstract In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p‐channel polycrystalline silicon (poly‐Si) and n‐channel a
Externí odkaz:
https://doaj.org/article/3231c8bc313b433e97f33e85e41b336c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1317-1322 (2020)
In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high-κ HfO2 gate insulator (GI) have been successfully fabricated and
Externí odkaz:
https://doaj.org/article/47cc88f06816419e9ce313190c40cb3f
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 3070 (2021)
The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO2) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this st
Externí odkaz:
https://doaj.org/article/8f2f2df2639b432aa571c3967b6fa3cd
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2204 (2021)
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film c
Externí odkaz:
https://doaj.org/article/3894d4afe23b4690a96c6edfd5ae056d
Autor:
Po-Tsun Liu, 劉柏村
103
vitis ainifera L. is extensively grown in Europe and America region. The V. ainifera has the antioxidant activity. The purpose of the this research is inquiring into V. ainifera composition and measures with high-performance liquid chromatog
vitis ainifera L. is extensively grown in Europe and America region. The V. ainifera has the antioxidant activity. The purpose of the this research is inquiring into V. ainifera composition and measures with high-performance liquid chromatog
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6x84qv
Autor:
Po-Tsun Liu 劉柏村, 劉柏村
99
In order to discover a more efficient broadcasting scheme, we’ve searched through many reviews of relevant research before creating our proposed scheme. Since there have been so many multi-functional schemes proposed by researchers, among t
In order to discover a more efficient broadcasting scheme, we’ve searched through many reviews of relevant research before creating our proposed scheme. Since there have been so many multi-functional schemes proposed by researchers, among t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/2dnjbu
Autor:
PO-TSUN LIU, 劉柏村
88
In advanced integrated circuits, more than two levels of interconnecting metal layers are necessary, called multilevel interconnects. Electrically insulating materials known as inter-metal dielectrics can provide isolation between these metal
In advanced integrated circuits, more than two levels of interconnecting metal layers are necessary, called multilevel interconnects. Electrically insulating materials known as inter-metal dielectrics can provide isolation between these metal
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57057026480567662514
Autor:
Yan-Kui Liang, Jing-Wei Lin, Li-Chi Peng, Yi Miao Hua, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward-Yi Chang, Chun-Hsiung Lin
Publikováno v:
IEEE Transactions on Electron Devices. 70:1067-1072
Autor:
Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:2105-2108
Autor:
Chien-Hung Wu, Shuo-Yen Lin, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, Yi-Jie Wang
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:1548-1553
Low temperature poly-crystalline silicon thin-film transistors (LTPS-TFTs) and indium-gallium-zinc-oxide TFTs (IGZO-TFTs) are potential candidates for future technology of various displays. Due to its simple manufacturing process, low cost and good u