Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Po-Shao Yeh"'
Autor:
Yu-De Lin, Po-Chun Yeh, Ying-Tsan Tang, Jian-Wei Su, Hsin-Yun Yang, Yu-Hao Chen, Chih-Pin Lin, Po-Shao Yeh, Jui-Chin Chen, Pei-Jer Tzeng, Min-Hung Lee, Tuo-Hung Hou, Shyh-Shyuan Sheu, Wei-Chung Lo, Chih-I Wu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900cfd8cecaffe11f9445573a706ff39
https://doi.org/10.1109/iedm19574.2021.9720692
https://doi.org/10.1109/iedm19574.2021.9720692
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:2614-2621
In this paper, a novel 4T-2R self-aligned nitride (SAN) cell-integrated static random-access memory (SRAM) cell is first implemented for true random number generator (TRNG) applications. The SRAM can be latched to either state by the unpredictable ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4fa02bfc96abc417f46064d5ec55c78
https://doi.org/10.1109/jssc.2019.2924094
https://doi.org/10.1109/jssc.2019.2924094
Autor:
Fang-Ming Chen, Yao-Jen Chang, Shan-Yi Yang, Shyh-Shyuan Sheu, Yi-Hui Su, Hsin-Tsun Wu, Yu-Chen Hsin, Guan-Long Chen, SK Ziaur Rahaman, I-Jung Wang, Kuan-Ming Chen, Denny Duan-Lee Tang, Hsu-Ming Hsiao, Sih-Han Li, Jeng-Hua Wei, Po-Shao Yeh, Chih-I Wu, H. Y. Lee
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449d57f227b2ef9bdcc9633b39daf668
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
Publikováno v:
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).
The randomness and unpredictability of Random Telegraph Noise (RTN) of 16nm FinFET Dielectric (FIND) RRAM is firstly implemented to Time-Contingent Physical Unclonable Function (PUF) application. A novel 3D Time-Contingent Physical Unclonable Functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c2da854685a24f1be327196213d0b6b
https://doi.org/10.1109/edtm.2017.7947558
https://doi.org/10.1109/edtm.2017.7947558
Publikováno v:
IEEE Journal of Solid-State Circuits; Sep2019, Vol. 54 Issue 9, p2614-2621, 8p