Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Po-Sen Mao"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Lin-Yun Huang, Ming-Yang Li, San-Lin Liew, Shih-Chu Lin, Ang-Sheng Chou, Ming-Chun Hsu, Ching-Hao Hsu, Yu-Tung Lin, Po-Sen Mao, Duen-Huei Hou, Wei-Cheng Liu, Chih-I Wu, Wen-Hao Chang, Han Wang, Lain-Jong Li, Kung-Hwa Wei
Publikováno v:
ACS Materials Letters. :1760-1766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a539510c21ddf1a588942e90f852c4
https://doi.org/10.1021/acsmaterialslett.3c00094
https://doi.org/10.1021/acsmaterialslett.3c00094
Autor:
Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin, Yi-Xuan Chen, Wei-Sheng Yun, Po-Hsun Ho, Jer-Fu Wang, Sheng-Kai Su, Chen-Feng Hsu, Po-Sen Mao, Yu-Cheng Chang, Chao-Hsin Chien, Bo-Heng Liu, Chien-Ying Su, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Wen-Hao Chang, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c68493ea541d5bb68571fa91c9af6ac
https://doi.org/10.1109/iedm45625.2022.10019552
https://doi.org/10.1109/iedm45625.2022.10019552