Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Po-Jung Sung"'
Autor:
Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 107-113 (2023)
Monolithic 3D stacking of complementary FET (CFET) SRAM arrays increases integration density multi-fold while supporting the inherent SRAM advantages of low write power and near-infinite endurance. We propose stacking multiple 8-transistor CFET-SRAM
Externí odkaz:
https://doaj.org/article/71ecc867419a46bfb68015417da2ac79
Autor:
Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 474-480 (2020)
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectri
Externí odkaz:
https://doaj.org/article/b2d47eea11114ee2bde6e615d2f53b36
Autor:
Sourav De, Md. Aftab Baig, Bo-Han Qiu, Franz Müller, Hoang-Hiep Le, Maximilian Lederer, Thomas Kämpfe, Tarek Ali, Po-Jung Sung, Chun-Jung Su, Yao-Jen Lee, Darsen D. Lu
Publikováno v:
Frontiers in Nanotechnology, Vol 3 (2022)
This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET) with a 1 µs write pulse of maximum ±5 V amplitude and WRITE endurance above 109 cycles. Fe-finFET devices with single and multiple fins have been fabricated
Externí odkaz:
https://doaj.org/article/e00d78ed90be40e29e7c428dbb80f3f5
Autor:
Po-Jung Sung, 宋柏融
104
Magnetic resonance imaging (MRI) techniques such as anatomical and diffusion tensor imaging (DTI) have been widely applied to investigate the central nervous system (CNS). However, commercial MRI coils could not provide sufficient signal-to-
Magnetic resonance imaging (MRI) techniques such as anatomical and diffusion tensor imaging (DTI) have been widely applied to investigate the central nervous system (CNS). However, commercial MRI coils could not provide sufficient signal-to-
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61472278079858390347
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947
Autor:
Yao-Jen Lee, Hiroyuki Ishii, Tatsuro Maeda, Po-Jung Sung, T.-Z. Hong, Toshifumi Irisawa, Wen Hsin Chang
Publikováno v:
ECS Transactions. 102:17-26
Continuous scaling of device dimension pushed Si channel to its physical limit, alternative high mobility channels such as (Si)Ge and (In)GaAs have been considered to replace Si to further enhance CMOS performance. In the meantime, ultrathin body (UT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b8c176aa4644f13b484e78e19b41eae
https://doi.org/10.1149/10204.0017ecst
https://doi.org/10.1149/10204.0017ecst
Autor:
Bo Han Qiu, Yao-Jen Lee, Chun Jung Su, Mohammad Aftab Baig, Po Jung Sung, Wei Xuan Bu, Sourav De, Darsen D. Lu
Publikováno v:
ACS Applied Electronic Materials. 3:619-628
In this paper, we achieved excellent variation control, endurance enhancement, and leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–xZrxO2) based ferroelectric films by the germination ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe3e43e74bde53a50f0a80c49d4c235
https://doi.org/10.1021/acsaelm.0c00610
https://doi.org/10.1021/acsaelm.0c00610
Investigation on selectively etched SiGe and Si surface for Gate-All-Around CMOS devices fabrication
Autor:
Wei-Yuan Chang, Chun-Lin Chu, Guang-Li Luo, Yi-Shuo Huang, Chun-Hsiung Lin, Po-Jung Sung, Yao-Jen Lee, Shih-Hong Chen, Bo-Yuan Chen, Wen-Fa Wu, Wen-Kuan Yeh
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00e533117a50896e91b3635a25783675
https://doi.org/10.1109/vlsi-tsa54299.2022.9770996
https://doi.org/10.1109/vlsi-tsa54299.2022.9770996
Autor:
Tien-Sheng Chao, Shih Hsuan Lo, Chun Jung Su, Po Jung Sung, Darsen D. Lu, Yao-Jen Lee, Fu-Kuo Hsueh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 474-480 (2020)
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c12afb4e103d8abe1739a0f93fedda8f
https://doi.org/10.1109/jeds.2020.2987005
https://doi.org/10.1109/jeds.2020.2987005
Autor:
M. Miura, T.-Z. Hong, C.-J. Tsai, X.-R. Yu, Y.-T. Huang, Y. Chuang, Hiroyuki Ishii, Seiji Samukawa, Chia-Min Lin, G.-L. Luo, C.-J. Su, Jiun-Yun Li, Kuo-Hsing Kao, T.-Y. Chu, Tatsuro Maeda, Po-Jung Sung, W. C.-Y. Ma, H.-Y. Chao, Ta-Chun Cho, Hisu-Chih Chen, W.-H. Chang, Guo-Wei Huang, N.-C. Lin, S.-M. Luo, Kun-Lin Lin, Jia-Min Shieh, Toshifumi Irisawa, K.-P. Huang, Fu-Kuo Hsueh, Chien-Ting Wu, Jianqing Lin, C.-Y. Yang, W.-F. Wu, S.-T. Chung, J.-H. Tarng, Tien-Sheng Chao, Ricky W. Chuang, Darsen D. Lu, Yeong-Her Wang, Yao-Jen Lee, A. Agarwal, Yiming Li, M.-J. Li, Wen-Kuan Yeh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85a6f84bd690a0af5c9400f93a632
https://doi.org/10.1109/iedm13553.2020.9372001
https://doi.org/10.1109/iedm13553.2020.9372001