Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Po-Chin Chang"'
Publikováno v:
Kaohsiung Journal of Medical Sciences, Vol 34, Iss 1, Pp 43-48 (2018)
Postoperative leak is a serious complication of bariatric surgery and often results in significant morbidity and mortality. Stent placement is a less invasive alternative to surgery for the treatment of bariatric surgical leak. We evaluated the effic
Externí odkaz:
https://doaj.org/article/5fde3b82c03d4bac8792f5b743099b54
Autor:
Po-Chin Chang, 張博欽
94
In order to find out the consequence of online auction behavior, it is urgent to test our model. Therefore, in this study we will try to exquisite analyze online consumption behavior, and extract advice for online auction user and online auct
In order to find out the consequence of online auction behavior, it is urgent to test our model. Therefore, in this study we will try to exquisite analyze online consumption behavior, and extract advice for online auction user and online auct
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/71842927726088543108
Autor:
Po-Chin Chang, 張博欽
93
Malignant tumor has become the most important cause of death around the world and in our country. Drug resistance formation due to high genetic instability of tumor cells were reported in conventional tumor therapies. Tumor progress and metas
Malignant tumor has become the most important cause of death around the world and in our country. Drug resistance formation due to high genetic instability of tumor cells were reported in conventional tumor therapies. Tumor progress and metas
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/84712081077740827177
Autor:
Po-Chin Chang, 張博欽
87
ABAQUS is widely used finite element software in the application of various industries. It can simulate very complicated problem in materials processing, such as: plastic deformation and creep because a subroutine can be join in the ABAQUS an
ABAQUS is widely used finite element software in the application of various industries. It can simulate very complicated problem in materials processing, such as: plastic deformation and creep because a subroutine can be join in the ABAQUS an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/60990066211050962272
Publikováno v:
Kaohsiung Journal of Medical Sciences, Vol 34, Iss 1, Pp 43-48 (2018)
Postoperative leak is a serious complication of bariatric surgery and often results in significant morbidity and mortality. Stent placement is a less invasive alternative to surgery for the treatment of bariatric surgical leak. We evaluated the effic
Publikováno v:
Surface and Interface Analysis. 46:1178-1182
Phase change memory has been considered as one of the most promising alternatives for next-generation nonvolatile semiconductor memory. Modification of phase change materials by impurity doping has been proved to be an effective way to improve phase
Publikováno v:
Journal of Non-Crystalline Solids. 383:106-111
Crystallization behavior of Si-added amorphous Ga19Sb81 films was studied by measuring electrical resistance (R) versus temperature (T) at various heating rates. The crystallization temperatures obtained from the R–T curves increase from 228 to 284
Autor:
Chih-Chung Chang, Hsin-Wei Huang, Shih-Chin Chang, Po-Chin Chang, Tsung-Shune Chin, Ming-Jinn Tsai
Publikováno v:
Thin Solid Films. 544:107-111
We studied Ga 19 Sb 81 film deposited on SiO x /Si(100) by RF co-sputtering using GaSb and Sb targets aiming for applications in multi-level phase-change memory. Crystallization temperature ( T x ) is 228 °C–235 °C determined by electrical resist
Publikováno v:
ICALT
In this paper, we investigate if a computer-supported collaborative brainstorming environment for programming design can promote students' creativity. We developed a web-based learning environment to foster the competence of innovation, one of the es
Autor:
Der-Sheng Chao, Jenq-Horng Liang, Shih-Chin Chang, Po-Chin Chang, Tsung-Shune Chin, Po-Hsiang Lee, Ming-Jinn Tsai
Publikováno v:
Thin Solid Films. 520:6636-6641
Crystallization and thermal stability of Ge2Sb2Te5 (GST), the benchmark working material in phase-change non-volatile memory, were modified via Si-ion implantation. Through 5 × 1015 Si-ions/cm2 ion-implantation, crystallization temperature increases