Zobrazeno 1 - 10
of 403
pro vyhledávání: '"Po Tsun Liu"'
Publikováno v:
Advanced Science, Vol 10, Iss 9, Pp n/a-n/a (2023)
Abstract In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p‐channel polycrystalline silicon (poly‐Si) and n‐channel a
Externí odkaz:
https://doaj.org/article/3231c8bc313b433e97f33e85e41b336c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1317-1322 (2020)
In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high-κ HfO2 gate insulator (GI) have been successfully fabricated and
Externí odkaz:
https://doaj.org/article/47cc88f06816419e9ce313190c40cb3f
Autor:
Yan-Kui Liang, Jing-Wei Lin, Li-Chi Peng, Yi Miao Hua, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward-Yi Chang, Chun-Hsiung Lin
Publikováno v:
IEEE Transactions on Electron Devices. 70:1067-1072
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4ac72da8495813643d76612e97fe09
https://doi.org/10.1109/ted.2022.3232476
https://doi.org/10.1109/ted.2022.3232476
Autor:
Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:2105-2108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1025c069493b75abac9c7905ee2af4ff
https://doi.org/10.1109/led.2022.3216620
https://doi.org/10.1109/led.2022.3216620
Autor:
Chien-Hung Wu, Shuo-Yen Lin, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, Yi-Jie Wang
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:1548-1553
Low temperature poly-crystalline silicon thin-film transistors (LTPS-TFTs) and indium-gallium-zinc-oxide TFTs (IGZO-TFTs) are potential candidates for future technology of various displays. Due to its simple manufacturing process, low cost and good u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acbc39a962b189d88cdb5d3d0efacd96
https://doi.org/10.1166/jno.2022.3341
https://doi.org/10.1166/jno.2022.3341
Publikováno v:
IEEE Transactions on Electron Devices. 69:4791-4795
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14badadc65a422a2a8a0a1b94f6a9db
https://doi.org/10.1109/ted.2022.3188587
https://doi.org/10.1109/ted.2022.3188587
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:1226-1230
Since the first n-type TFT was introduced in 1962, it was made of polycrystalline cadmium sulfide (CdS) as the active layer, silicon dioxide (SiO2) and gold (Au) as the insulator electrodes. Now, n-type TFT is still the most applications in display p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27e83fbc833c127cc48146982bf5d1f
https://doi.org/10.1166/jno.2022.3294
https://doi.org/10.1166/jno.2022.3294
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 3070 (2021)
The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO2) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this st
Externí odkaz:
https://doaj.org/article/8f2f2df2639b432aa571c3967b6fa3cd
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2204 (2021)
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film c
Externí odkaz:
https://doaj.org/article/3894d4afe23b4690a96c6edfd5ae056d
Autor:
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Chih-Wei Liu, Yao-Jen Lee, Yu-Hsuan Chien, Bo-Lien Kuo, Yu-Chuan Chiu, Kai-Jhih Gan, Chih-Chieh Hsu, Po-Tsun Liu
Publikováno v:
IEEE Electron Device Letters. 43:838-841
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a026924c466da39e655dddcd0a2248b
https://doi.org/10.1109/led.2022.3167952
https://doi.org/10.1109/led.2022.3167952