Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Po Shan Hsu"'
Autor:
Feng Wu, Shuji Nakamura, Ingrid Koslow, Alexey E. Romanov, Po Shan Hsu, James S. Speck, Erin C. Young, Matthew T. Hardy, Steven P. DenBaars
Publikováno v:
Journal of Crystal Growth. 388:48-53
The onset of plastic relaxation via misfit dislocation (MD) formation in In x Ga 1− x N layers grown by metal-organic chemical vapor deposition on the ( 11 2 ¯ 2 ) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::506cd4db10df8102860974f04e4725dd
https://doi.org/10.1016/j.jcrysgro.2013.10.027
https://doi.org/10.1016/j.jcrysgro.2013.10.027
Autor:
James S. Speck, Robert M. Farrell, Steven P. DenBaars, Shuji Nakamura, Jeremiah J. Weaver, Po Shan Hsu, Kenji Fujito
Publikováno v:
IEEE Photonics Technology Letters. 25:2105-2107
We compare facet morphology, device characteristics, and far field patterns (FFPs) for semipolar (1122) laser diodes fabricated with mechanically polished and dry etched mirror facets. Facets formed by Cl2-based dry etching produced inclined and heav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f00d276dd9451799a4e7e57780553b
https://doi.org/10.1109/lpt.2013.2281608
https://doi.org/10.1109/lpt.2013.2281608
Autor:
Daniel A. Haeger, Casey Holder, Shuji Nakamura, Kenji Fujito, Robert M. Farrell, James S. Speck, Po Shan Hsu, Daniel A. Cohen, Steven P. DenBaars, Kathryn M. Kelchner
Publikováno v:
69th Device Research Conference.
We have previously demonstrated the AlGaN-cladding-free (ACF) laser diode (LD) concept over a wide visible spectral range and various nonpolar/semipolar crystallographic orientations. The benefits of this ACF epitaxial design include lower operating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::743b5f08adff40b442d75167ca256435
https://doi.org/10.1109/drc.2011.5994523
https://doi.org/10.1109/drc.2011.5994523
Autor:
Feng Wu, Matthew T. Hardy, Po Shan Hsu, James S. Speck, Steven P. DenBaars, Daniel A. Haeger, Shuji Nakamura
Publikováno v:
Journal of Applied Physics. 114:183101
Semipolar oriented laser diodes (LDs) have fundamental advantages over c-plane oriented LDs, however, the thickness and composition of InGaN waveguiding layers and AlGaN cladding are limited by the onset of stress relaxation via threading dislocation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f823f2077746e284aadbaddb0c395861
https://doi.org/10.1063/1.4829699
https://doi.org/10.1063/1.4829699
Autor:
Kenji Fujito, Shuji Nakamura, Po Shan Hsu, Alexey E. Romanov, Steven P. DenBaars, Erin C. Young, Feng Wu, James S. Speck
Publikováno v:
Applied Physics Letters. 103:161117
Strain compensated AlGaN/InGaN superlattice electron/hole blocking layers were utilized in semipolar (112¯2) laser diodes grown on intentionally stress-relaxed n-InGaN waveguiding layers. The use of an AlGaN/InGaN superlattice instead of a single co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e02cd3f5150f7c063ebe88f46c3c9e7
https://doi.org/10.1063/1.4826087
https://doi.org/10.1063/1.4826087
Autor:
A. Pourhashemi, James S. Speck, Robert M. Farrell, S. P. DenBaars, Kathryn M. Kelchner, Po Shan Hsu, Shuji Nakamura, Matthew T. Hardy
Publikováno v:
Applied Physics Letters. 103:151112
We demonstrate high-power AlGaN-cladding-free blue laser diodes (LDs) on semipolar (202¯1¯) GaN substrates with peak output powers and external quantum efficiencies (EQEs) that are comparable to state-of-the-art commercial c-plane devices. Ridge wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c03ddc8877ef4f15e9998770517608
https://doi.org/10.1063/1.4824773
https://doi.org/10.1063/1.4824773
Autor:
Erin C. Young, Steven P. DenBaars, Daniel A. Haeger, Shuji Nakamura, Ingrid Koslow, Po Shan Hsu, James S. Speck, Matthew T. Hardy
Publikováno v:
Applied Physics Letters. 101:132102
Several series of (202¯1) oriented InGaN/GaN heterostructures were grown to examine the impact of Si and Mg doping on stress relaxation by misfit dislocation formation. Si doping greatly reduced m-plane slip misfit dislocation lines as observed in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6742b5d10ee81c4b11d4d3d47382f1ad
https://doi.org/10.1063/1.4754693
https://doi.org/10.1063/1.4754693
Autor:
Ingrid Koslow, Feng Wu, Steven P. DenBaars, Shuji Nakamura, Alexey E. Romanov, James S. Speck, Matthew T. Hardy, Erin C. Young, Yuh-Renn Wu, Po-Yuan Dang, Po Shan Hsu
Publikováno v:
Applied Physics Letters. 101:121106
Long wavelength (525–575 nm) (112¯2) light emitting diodes were grown pseudomorphically on stress relaxed InGaN buffer layers. Basal plane dislocation glide led to the formation of misfit dislocations confined to the bottom of the InGaN buffer lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd7d4b93c8ff58bbf65ed0d4a7b9dbc
https://doi.org/10.1063/1.4753949
https://doi.org/10.1063/1.4753949
Autor:
Po Shan Hsu, Alexey E. Romanov, James S. Speck, Feng Wu, Shuji Nakamura, Matthew T. Hardy, Ingrid Koslow, Erin C. Young, Steven P. DenBaars
Publikováno v:
Applied Physics Letters. 100:202103
We have studied primary and secondary slip systems in the relaxation of lattice mismatch stresses in (202¯1) and (303¯1¯) semipolar InxGa1−xN/GaN heterostructures by analyzing the geometry of traces associated with dislocations employing cathodo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a5d2256a252a00d5f2f54353241375
https://doi.org/10.1063/1.4716465
https://doi.org/10.1063/1.4716465
Autor:
Yoshinobu Kawaguchi, Po Shan Hsu, Shih Chieh Huang, James S. Speck, Chih Chien Pan, Chia-Yen Huang, Shinichi Tanaka, Shuji Nakamura, Kenji Fujito, Qimin Yan, Chris G. Van de Walle, Steven P. DenBaars, Yuji Zhao, Daniel F. Feezell
Publikováno v:
Applied Physics Letters. 100:201108
We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (202¯1¯) and (112¯2) planes have the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33329d95ab9d5fb1be31b1a70cb412d0
https://doi.org/10.1063/1.4719100
https://doi.org/10.1063/1.4719100